STGW80H65FB STMicroelectronics

STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J TAB High speed switching series Minimized tail current V = 1.6 V (typ.) I = 80 A CE(sat) C 3 3 Tight parameter distribution 2 2 1 1 Safe paralleling TO-3P TO-247 Low thermal resistance TO-247 long leads Applications Photovoltaic inverters Figure 1. Internal schematic diagram High frequency converters C (2 or TAB) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new HB G (1) series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V temperature coefficient and very CE(sat) tight parameter distribution result in safer E (3) paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW80H65FB GW80H65FB TO-247 Tube STGWA80H65FB GWA80H65FB TO-247 long leads Tube STGWT80H65FB GWT80H65FB TO-3P Tube June 2014 DocID026401 Rev 1 1/18 This is information on a product in full production. www.st.com 18Contents STGW80H65FB, STGWA80H65FB, STGWT80H65FB Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 10 4 Package mechanical data 11 4.1 TO-247, STGW80H65FB 11 4.2 TO-247 long leads, STGWA80H65FB . 13 4.3 TO-3P, STGWT80H65FB . 15 5 Revision history . 17 2/18 DocID026401 Rev 1