X-On Electronics has gained recognition as a prominent supplier of STGWA20M65DF2 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWA20M65DF2 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGWA20M65DF2 STMicroelectronics

STGWA20M65DF2 electronic component of STMicroelectronics
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Part No.STGWA20M65DF2
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop IGBT M series 650 V 20 A low loss
Datasheet: STGWA20M65DF2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.5956 ea
Line Total: USD 8.6 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 8.5956
10 : USD 3.0965
25 : USD 2.9308

   
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We are delighted to provide the STGWA20M65DF2 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWA20M65DF2 and other electronic components in the IGBT Transistors category and beyond.

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STGWA20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT Features High short-circuit withstand time V = 1.55 V (typ.) I = 20 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode C (2) Applications Motor control UPS PFC G (1) General-purpose inverters Description Sc12850 no tab E (3) This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGWA20M65DF2 Product summary Order code STGWA20M65DF2 Marking G20M65DF2 Package TO-247 long leads Packing Tube DS11376 - Rev 3 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGWA20M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 650 V CES GE I Continuous collector current at T = 25 C 40 A C C I Continuous collector current at T = 100 C 20 A C C (1) I Pulsed collector current 80 A CP V Gate-emitter voltage 20 V GE I Continuous forward current at T = 25 C 40 A F C I Continuous forward current at T = 100 C 20 A F C (1) I Pulsed forward current 80 A FP P Total dissipation at T = 25 C 166 W TOT C T Storage temperature range - 55 to 150 C STG T Operating junction temperature range - 55 to 175 C J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.9 C/W thJC R Thermal resistance junction-case diode 2.08 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA DS11376 - Rev 3 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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