X-On Electronics has gained recognition as a prominent supplier of STGWA30H65DFB IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGWA30H65DFB IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGWA30H65DFB STMicroelectronics

Name: STGWA30H65DFB
Brand: STMicroelectronics
SKU: STGWA30H65DFB_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STGWA30H65DFB electronic component of STMicroelectronics

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Part No.	STGWA30H65DFB
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package
Datasheet:	STGWA30H65DFB Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 5.404 ea
Line Total: USD 5.4

Availability - 10
Ship by Wed. 30 Apr to Fri. 02 May

MOQ: 1 Multiples: 1
Pack Size: 1

STGWA30H65DFB More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

10

Ship by Wed. 30 Apr to Fri. 02 May

MOQ : 1
Multiples : 1

1 : USD 5.404
3 : USD 4.858
5 : USD 4.018
13 : USD 3.808

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

IGBT Transistors IGBT Transistors

Configuration

Single Single

Collector- Emitter Voltage VCEO Max

650 V 650 V

Collector-Emitter Saturation Voltage

1.55 V 1.55 V

Maximum Gate Emitter Voltage

20 V 20 V

Continuous Collector Current at 25 C

60 A 60 A

Gate-Emitter Leakage Current

250 nA 250 nA

Package / Case

TO - 247 - 3 TO - 247 - 3

Technology

Si Si

Mounting Style

Through Hole Through Hole

Technology

Si Si

Pd - Power Dissipation

260 W 260 W

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Series

Stgwa30h65dfb Stgwa30h65dfb

Brand

Stmicroelectronics Stmicroelectronics

Product Type

Igbt Transistors Igbt Transistors

Factory Pack Quantity :

600 600

Subcategory

Igbts Igbts

Notes:- Show Stocked Products With Similar Attributes.

STGWA30H65DFB Alternative Parts

We are delighted to provide the STGWA30H65DFB from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGWA30H65DFB and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

.The STGWA30H65DFB is an integrated switching power management solution designed and manufactured by STMicroelectronics. It is a field-stop IGBT (Insulated Gate Bipolar Transistor) of the HB series, in a TO-247 package with long leads. This IGBT has a breakdown voltage of 650V, and a current rating of 30A. The design utilizes Trench gate technology to ensure high speed switching and to reduce switching losses. This IGBT is suitable for high frequency circuits and applications, and is a dependable choice for many power conversion applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
10 Ship by Wed. 30 Apr to Fri. 02 May MOQ : 1 Multiples : 1	1 : USD 5.404 3 : USD 4.858 5 : USD 4.018 13 : USD 3.808

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