X-On Electronics has gained recognition as a prominent supplier of GT30J122A(STA1,E,D IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. GT30J122A(STA1,E,D IGBT Transistors are a product manufactured by Toshiba. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

GT30J122A(STA1,E,D Toshiba

GT30J122A(STA1,E,D electronic component of Toshiba
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See Product Specifications
Part No.GT30J122A(STA1,E,D
Manufacturer: Toshiba
Category: IGBT Transistors
Description: IGBTs TO-3PN RoHS
Datasheet: GT30J122A(STA1,E,D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3286 ea
Line Total: USD 2.33

Availability - 285
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
285
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 2.091
10 : USD 1.8229
30 : USD 1.5078
100 : USD 1.3372
500 : USD 1.2602
1000 : USD 1.2266

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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We are delighted to provide the GT30J122A(STA1,E,D from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT30J122A(STA1,E,D and other electronic components in the IGBT Transistors category and beyond.

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The GT30J122A(STA1,E,D with IGBTs TO-3PN RoHS is a power model transistor manufactured by Toshiba. It is designed for use in power applications that require switching and high frequency amplifying. The GT30J122A(STA1,E,D is a three pin, TO-3PN RoHS package and it includes two discrete insulated gate bipolar transistors (IGBTs) for enhanced efficiency and performance. The insulation gate doors allow for a higher level of performance than traditional bipolar transistors. This device has a maximum collector-base voltage of 600 V and a maximum continuous forward current of 30A. It also has a maximum collector current of 45A and a maximum switching frequency of 15 kHz. It is compliant with the RoHS directive and is ideal for applications that need high speed and high efficiency.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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