GT60J323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J323
Current Resonance Inverter Switching Application
Unit: mm
Enhancement mode type
High speed : t = 0.16 s (typ.) (I = 60A)
f C
Low saturation voltage: V = 1.9 V (typ.) (I = 60A)
CE (sat) C
FRD included between emitter and collector
Fourth generation IGBT
TO-3P(LH) (Toshiba package name)
Absolute Maximum Ratings (Ta = 25C)
Characteristics Symbol Rating Unit
Collector-emitter voltage V 600 V
CES
Gate-emitter voltage V 25 V
GES
@ Tc = 100C 33
Continuous collector
I A
C
current
@ Tc = 25C 60
Pulsed collector current I 120 A
CP
DC I 30
F
Diode forward current A
JEDEC
Pulsed I 120
FP
@ Tc = 100C 68
JEITA
Collector power
P W
C
dissipation
@ Tc = 25C 170
TOSHIBA 2-21F2C
Junction temperature T 150 C
j
Weight: 9.75 g (typ.)
Storage temperature range T 55 to 150 C
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance (IGBT) R 0.74 C/W
th (j-c)
Thermal resistance (diode) R 1.56 C/W
th (j-c)
Equivalent Circuit Marking
Collector
Part No. (or abbreviation code)
TOSHIBA
GT60J323
Gate
Lot No.
JAPAN
Emitter
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2006-11-01 GT60J323
Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. MaxUnit
Gate leakage current I V = 25 V, V = 0 500 nA
GES GE CE
Collector cut-off current I V = 600 V, V = 0 1.0 mA
CES CE GE
Gate-emitter cut-off voltage V I = 60 mA, V = 5 V 3.0 6.0 V
GE (OFF) C CE
Collector-emitter saturation voltage V I = 60 A, V = 15 V 1.9 2.5 V
CE (sat) C GE
Input capacitance C V = 10 V, V = 0, f = 1 MHz 4800 pF
ies CE GE
t 0.17
Rise time Resistive Load
r
Turn-on time t V = 300 V, I = 60 A 0.23
CC C
on
Switching time
s
V = 15 V, R = 30
Fall time t GG G 0.16 0.26
f
(Note 1)
Turn-off time t 0.41
off
Diode forward voltage V I = 30 A, V = 0 1.4 2.0 V
F F GE
Reverse recovery time t I = 30 A, di/dt = 100 A/s 0.1 0.2 s
rr F
Note 1: Switching time measurement circuit and input/output waveforms
V
GE
90%
10%
0
R
G
R
L
I
C
0
90% 90%
V
CC
V 10% 10%
CE
0
t
d (off)
t
f t
r
t t
off on
2 2006-11-01