X-On Electronics has gained recognition as a prominent supplier of GT60J323(Q) IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. GT60J323(Q) IGBT Transistors are a product manufactured by Toshiba. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

GT60J323(Q) Toshiba

GT60J323(Q) electronic component of Toshiba
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See Product Specifications
Part No.GT60J323(Q)
Manufacturer: Toshiba
Category: IGBT Transistors
Description: Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P(LH)
Datasheet: GT60J323(Q) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 9.7624 ea
Line Total: USD 29.29 
Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3
Multiples : 1
3 : USD 9.7624

   
Manufacturer
Product Category
Configuration
Continuous Collector Current at 25 C
Maximum Operating Temperature
Collector Current Dc Max
Collector-Emitter Voltage
Mounting
Package Type
Pin Count
Operating Temperature Min
Operating Temperature Classification
Channel Type
Gate To Emitter Voltage Max
Rad Hardened
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We are delighted to provide the GT60J323(Q) from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT60J323(Q) and other electronic components in the IGBT Transistors category and beyond.

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GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application Unit: mm Enhancement mode type High speed : t = 0.16 s (typ.) (I = 60A) f C Low saturation voltage: V = 1.9 V (typ.) (I = 60A) CE (sat) C FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-emitter voltage V 600 V CES Gate-emitter voltage V 25 V GES @ Tc = 100C 33 Continuous collector I A C current @ Tc = 25C 60 Pulsed collector current I 120 A CP DC I 30 F Diode forward current A JEDEC Pulsed I 120 FP @ Tc = 100C 68 JEITA Collector power P W C dissipation @ Tc = 25C 170 TOSHIBA 2-21F2C Junction temperature T 150 C j Weight: 9.75 g (typ.) Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R 0.74 C/W th (j-c) Thermal resistance (diode) R 1.56 C/W th (j-c) Equivalent Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA GT60J323 Gate Lot No. JAPAN Emitter A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT60J323 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 25 V, V = 0 500 nA GES GE CE Collector cut-off current I V = 600 V, V = 0 1.0 mA CES CE GE Gate-emitter cut-off voltage V I = 60 mA, V = 5 V 3.0 6.0 V GE (OFF) C CE Collector-emitter saturation voltage V I = 60 A, V = 15 V 1.9 2.5 V CE (sat) C GE Input capacitance C V = 10 V, V = 0, f = 1 MHz 4800 pF ies CE GE t 0.17 Rise time Resistive Load r Turn-on time t V = 300 V, I = 60 A 0.23 CC C on Switching time s V = 15 V, R = 30 Fall time t GG G 0.16 0.26 f (Note 1) Turn-off time t 0.41 off Diode forward voltage V I = 30 A, V = 0 1.4 2.0 V F F GE Reverse recovery time t I = 30 A, di/dt = 100 A/s 0.1 0.2 s rr F Note 1: Switching time measurement circuit and input/output waveforms V GE 90% 10% 0 R G R L I C 0 90% 90% V CC V 10% 10% CE 0 t d (off) t f t r t t off on 2 2006-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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