X-On Electronics has gained recognition as a prominent supplier of HN1A01FE-Y,LF Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. HN1A01FE-Y,LF Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

HN1A01FE-Y,LF Toshiba

HN1A01FE-Y,LF electronic component of Toshiba
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Part No.HN1A01FE-Y,LF
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT ES6 PLN
Datasheet: HN1A01FE-Y,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1021 ea
Line Total: USD 0.51 
Availability - 18
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5

 HN1A01FE-Y,LF More Buying Options & Price Grid(s)

Availability Price Quantity
18
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1021
50 : USD 0.0839
150 : USD 0.0748
500 : USD 0.068
2500 : USD 0.0588
4000 : USD 0.0561

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HN1A01FE-Y,LF from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HN1A01FE-Y,LF and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The HN1A01FE-Y,LF with Bipolar Transistors - BJT ES6 PLN manufactured by Toshiba is a low-voltage bipolar transistor that utilizes advanced PowerMESH technology. It features low-ON-resistance, low saturation voltage, and low-noise operation. It can also be used for medium-frequency switching applications. The Toshiba HN1A01FE-Y,LF delivers a maximum of 150mA at a collector-emitter voltage of 50V and has a collector-base cutoff frequency of up to 1MHz. It has a maximum collector-emitter saturation voltage of 0.25V, a maximum collector-base breakdown voltage of 60V, and a maximum emitter-base breakdown voltage of 6V. It is available in a plastic molded package, with pins making direct contact with the substrate.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

TOSHIBA LED LIGHTING may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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