X-On Electronics has gained recognition as a prominent supplier of GT60M324(Q) igbt transistors across the USA, India, Europe, Australia, and various other global locations. GT60M324(Q) igbt transistors are a product manufactured by Toshiba. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

GT60M324(Q) Toshiba

GT60M324(Q) electronic component of Toshiba
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See Product Specifications
Part No.GT60M324(Q)
Manufacturer: Toshiba
Category:IGBT Transistors
Description: IGBT Transistors
Datasheet: GT60M324(Q) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.9792 ea
Line Total: USD 2.98

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 2.9792
10 : USD 2.1651
30 : USD 2.015
100 : USD 1.8649
500 : USD 1.7987
1000 : USD 1.7656
5000 : USD 1.6951

     
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Rohs
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We are delighted to provide the GT60M324(Q) from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT60M324(Q) and other electronic components in the IGBT Transistors category and beyond.

The GT60M324(Q) is an insulated-gate bipolar transistor (IGBT) manufactured by Toshiba. It is a 600 V device and has a current rating of 327 A. The device was designed to switch heavy currents quickly and efficiently, making it suitable for a wide range of applications such as motor control, power conversion, automotive systems and renewable energy. The GT60M324(Q) has a low ON-state voltage rating (Vcesat) of 2.5 V and a fast switching speed, with a maximum turn-on delay time (ton) of 2.5 µs. The device is rated for a low gate charge (Qg) of 11.5 nC and a short-circuit current (Isc) rating of 6.5 kA, ensuring superior performance in all types of applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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