Advance Technical Information TM GenX3 1200V V = 1200V MMIX1G120N120A3V1 CES IGBT w/ Diode I = 105A C110 V 2.2V (Electrically Isolated Tab) CE(sat) C Ultra-Low-Vsat PT IGBT for 3kHz Switching G Symbol Test Conditions Maximum Ratings E V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE Isolated Tab V Continuous 20 V GES C V Transient 30 V GEM I T = 25C 220 A C25 C I T = 110C 105 A C110 C E I T = 25C, 1ms 700 A CM C SSOA V = 15V, T = 125C, R = 1 I = 240 A G GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V CES G = Gate E = Emitter P T = 25C 400 W C C C = Collector T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg Silicon Chip on Direct-Copper Bond T Maximum Lead Temperature for Soldering 300 C L (DCB) Substrate T 1.6 mm (0.062 in.) from Case for 10 260 C SOLD Isolated Mounting Surface 2500V~ Electrical Isolation V 50/60Hz, 1 minute 2500 V~ ISOL Optimized for Low Conduction losses F Mounting Force 50..200/11..45 N/lb. C Square RBSOA Weight 8 g Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Low Gate Drive Requirement J BV I = 250A, V = 0V 1200 V CES C GE V I = 1mA, V = V 3.0 5.0 V Applications GE(th) C CE GE I V = V , V = 0V 50 A CES CE CES GE Power Inverters Note 2, T = 125C 5 mA J UPS Motor Drives I V = 0V, V = 20V 100 nA GES CE GE SMPS V I = 100A, V = 15V, Note 1 1.85 2.20 V PFC Circuits CE(sat) C GE T = 125 C 1.95 V Battery Chargers J Welding Machines Lamp Ballasts Inrush Current Protection Circuits DS100435(01/12) 2012 IXYS CORPORATION, All Rights ReservedMMIX1G120N120A3V1 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 45 73 S fs C CE C 9900 pF ies C V = 25V, V = 0V, f = 1MHz 655 pF oes CE GE C 240 pF res Q 420 nC g Q I = 120A, V = 15V, V = 0.5 V 70 nC ge C GE CE CES Q 180 nC gc t 40 ns d(on) Inductive load, T = 25C t J 67 ns ri I = 100A, V = 15V E 10 mJ C GE on V = 960V, R = 1 t 490 ns CE G d(off) t 325 ns Note 3 fi E 33 mJ off t 30 ns d(on) Inductive load, T = 125C J t 75 ns ri I = 100A, V = 15V C GE E 15 mJ on V = 960V, R = 1 t CE G 685 ns d(off) t Note 3 680 ns fi E 58 mJ off R 0.31 C/W thJC R 0.05 C/W thCS R 30 C/W thJA Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (TJ = 25C Unless Otherwise Specified) Min. Typ. Max. V I = 100A, V = 0V, Note 1 1.8 V F F GE I I = 50A, V 20 = 0V, A RM F GE -di /dt = 200A/s, V = 300V t 700 ns F R rr R 0.50 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Ices measurement. 3. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537