X-On Electronics has gained recognition as a prominent supplier of SGT60N60FD1PN IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. SGT60N60FD1PN IGBT Transistors are a product manufactured by Silan. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

SGT60N60FD1PN Silan

SGT60N60FD1PN electronic component of Silan
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See Product Specifications
Part No.SGT60N60FD1PN
Manufacturer: Silan
Category: IGBT Transistors
Description: TO-3P-3 IGBTs ROHS
Datasheet: SGT60N60FD1PN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0751 ea
Line Total: USD 2.08

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 13 Aug to Fri. 16 Aug
MOQ : 1
Multiples : 1
1 : USD 2.3056
10 : USD 2.1477
30 : USD 2.0505
90 : USD 1.9493
510 : USD 1.9028
1200 : USD 1.8846

   
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Product Category
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Rohs
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We are delighted to provide the SGT60N60FD1PN from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SGT60N60FD1PN and other electronic components in the IGBT Transistors category and beyond.

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The SGT60N60FD1PN IGBT with TO-3P-3 is a ROHS certified device manufactured by Silan. This device is an insulated-gate bipolar transistor (IGBT) that is a three-terminal power switching device. It has a low on-state resistance (RDS(on)), a fast switching speed, and a high current control capacity. It is suitable for switching applications such as motor drives, power supplies, and inverters. It has a distance between the gate and the emitter of 0.5 mm and operates with a forward voltage Vce of 1200V. It includes built-in temperature and short-circuit protection, and it is certified to meet the requirements of IEC 60747-14 and JIS C 5802 standards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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