Product Information

SVF10N60F

SVF10N60F electronic component of Silan

Datasheet
MOSFET N Trench 600V 10A (Tc) 4V @ 250uA 1 Ω @ 5A,10V TO-220F (TO-220IS) RoHS
Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8775 ea
Line Total: USD 0.88

97 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
31 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

SVF10N60F
Silan

1 : USD 0.807
10 : USD 0.665
50 : USD 0.5938
100 : USD 0.5229
500 : USD 0.4795
1000 : USD 0.4578

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SVF10N60F MOSFET is a N-channel trench-structure MOSFET manufactured by Silan. It has an operating voltage of 600V, a continuous drain current of 10A (Tc) and a 4V@250uA gate-source threshold voltage. Its drain-source on-resistance is 1 Ohm at a drain current of 5A, and has a drain-source breakdown voltage of 10V. The package of the MOSFET is a TO-220F (TO-220IS) package with RoHS certification.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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