X-On Electronics has gained recognition as a prominent supplier of SVF12N60F(S) MOSFETs across the USA, India, Europe, Australia, and various other global locations. SVF12N60F(S) MOSFETs are a product manufactured by Silan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SVF12N60F(S) Silan

SVF12N60F(S) electronic component of Silan
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See Product Specifications
Part No.SVF12N60F(S)
Manufacturer: Silan
Category: MOSFETs
Description: MOSFET TO-220F RoHS
Datasheet: SVF12N60F(S) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the SVF12N60F(S) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SVF12N60F(S) and other electronic components in the MOSFETs category and beyond.

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The SVF12N60F(S) is a MOSFET manufactured by Silan Microelectronics. It is a N-channel enhancement mode power field-effect transistor packaged in a TO-220F package and lead-free RoHS compliant. This transistor can handle up to 12A of continuous drain current and a maximum voltage of 600V, making it suitable for high power switching applications. The transistor is also able to operate at high switching frequencies of up to 500kHz, making it suitable for aggressive frequency applications. It has a low gate charge and threshold voltage, which makes it suitable for low-power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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