Product Information

SVD501DEAGTR

Name: SVD501DEAGTR
Brand: Silan
SKU: SVD501DEAGTR_Silan
Availability: OutOfStock
Rating: 5 (11 reviews)

SVD501DEAGTR electronic component of Silan

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Datasheet

MOSFET N Trench 600V 30mA (Tc) 1V @ 8uA 700 Î© @ 3mA,0V SOT23 RoHS

Manufacturer: Silan

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0952 ea
Line Total: USD 0.95

0 - Global Stock

MOQ: 10 Multiples: 10
Pack Size: 10

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 31 May to Wed. 05 Jun MOQ : 10 Multiples : 10 SVD501DEAGTR Silan	10 : USD 0.0952 100 : USD 0.0791 300 : USD 0.0674 1000 : USD 0.0578 5000 : USD 0.0563 10000 : USD 0.0554

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Additional Infomation About Product

The SVD501DEAGTR is a MOSFET N Trench manufactured by Silan with a 600V voltage rating, 30mA (Tc) 1V @ 8uA current limit, 700O @ 3mA, 0V with a SOT23 package and RoHS certification. This device is well suited for switching, amplifying, and voltage regulation applications due to its wide temperature range and precise control characteristics. Additionally, its SOT23 package provides high-density mounting and board space saving.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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Manufacturer Silan Silan
Product Category MOSFET MOSFET
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 30 mA 30 mA
Drain Source On Resistance Rdson@Vgs Id 700 Ohms @0V , 3mA 700 Ohms @0V , 3mA
Power Dissipation Pd 800 mW 800 mW
Gate Threshold Voltage Vgsth@Id 1 V @8uA 1 V @8uA
Type N Channel N Channel