High Voltage, High Gain V = 3000V MMIX4B22N300 CES TM BIMOSFET Monolithic I = 22A C90 Bipolar MOS Transistor C2 C1 V 2.7V G1 G2 CE(sat) E2C4 E1C3 (Electrically Isolated Tab) G3 G4 C2 E3E4 G2 E2C4 Symbol Test Conditions Maximum Ratings G4 E3E4 C1 V T = 25C to 150C 3000 V CES J G1 V T = 25C to 150C, R = 1M 3000 V CGR J GE E1C3 V Continuous 20 V GES G3 V Transient 30 V GEM Isolated Tab E3E4 I T = 25C 38 A C25 C G4 I T = 90C 22 A E2C4 C90 C G2 I T = 25C, 1ms 165 A C2 CM C G3 SSOA V = 15V, T = 125C, R = 15 I = 180 A GE VJ G CM E1C3 (RBSOA) Clamped Inductive Load V 1500 V CES G1 T V = 15V, T = 125C, C1 SC GE J (SCSOA) R = 52 , V = 1500V, Non-Repetitive 10 s G CE G = Gate E = Emitter P T = 25C 150 W C C C = Collector T -55 ... +150 C J T 150 C JM T -55 ... +150 C Features stg T Maximum Lead Temperature for Soldering 300 C L Silicon Chip on Direct-Copper Bond T Plastic Body for 10s 260 C SOLD (DCB) Substrate F Mounting Force 50..200 / 11..45 N/lb C Isolated Mounting Surface V 50/60Hz, 1 minute 4000 V~ 4000V~ Electrical Isolation ISOL High Blocking Voltage Weight 8 g High Peak Current Capability Low Saturation Voltage Symbol Test Conditions Characteristic Values Advantages (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Low Gate Drive Requirement BV I = 250A, V = 0V 3000 V CES C GE High Power Density V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE I V = V , V = 0V 35 A CES CE CES GE Note 2, T = 125C 1.5 mA Applications J I V = 0V, V = 20V 100 nA GES CE GE Switch-Mode and Resonant-Mode V I = 22A, V = 15V, Note 1 2.2 2.7 V Power Supplies CE(sat) C GE Capacitor Discharge Circuits T = 125C 2.7 V J 2018 IXYS CORPORATION, All Rights Reserved DS100627A(5/18) MMIX4B22N300 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 22A, V = 10V, Note 1 13 22 S fS C CE C 2200 pF ies C V = 25V, V = 0V, f = 1MHz 85 pF oes CE GE C 30 pF res Q 110 nC g(on) Q I = 22A, V = 15V, V = 1500V 13 nC ge C GE CE Q 45 nC gc t 46 ns d(on) Resistive Switching Times, T = 25C J t 360 ns r I = 22A, V = 15V C GE t 205 ns d(off) V = 960V, R = 15 CE G t 1820 ns f t 43 ns d(on) Resistive Switching Times, T = 125C J t 700 ns r I = 22A, V = 15V C GE t 220 ns d(off) V = 960V, R = 15 CE G t 1650 ns f R 0.83 C/W thJC R 0.05 C/W thCS R 30 C/W thJA Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max J V I = 22A, V = 0V, Note 1 2.7 V F F GE t 1.4 s rr I = 11A, V = 0V, -di /dt = 100A/s F GE F I 30 A RM V = 100V, V = 0V R GE Q 21 C RM Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Additional provisions for lead-to-lead voltage isolation are required at V > 1200V. CE IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537