X-On Electronics has gained recognition as a prominent supplier of MMIX1G320N60B3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. MMIX1G320N60B3 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

MMIX1G320N60B3 IXYS

MMIX1G320N60B3 electronic component of IXYS
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Part No.MMIX1G320N60B3
Manufacturer: IXYS
Category: IGBT Transistors
Description: Discrete Semiconductor Modules DISC IGBT SMPD PKG-STANDARD
Datasheet: MMIX1G320N60B3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 59.5689 ea
Line Total: USD 59.57 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 59.5689

   
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RoHS - XON
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Pd - Power Dissipation
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We are delighted to provide the MMIX1G320N60B3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMIX1G320N60B3 and other electronic components in the IGBT Transistors category and beyond.

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The MMIX1G320N60B3 is a high-performance, low-cost, insulated-gate bipolar transistor (IGBT) module, manufactured by IXYS. It features a nominal blocking voltage of 1,200 V and a continuous collector current rating of up to 320 A. The module is designed for use in switched-mode power supplies, universal motor drives, and other industrial applications. It has a robust, standard package design for easy integration into existing power conversion designs. The module is equipped with a Diode-Clamped IGBT, phase leg configuration, and dual top-side cooling for improved system efficiency and reliability. The IGBTs are isolated from the cooling baseplate and are clamped using four electrically isolated mounting screws. The module also features internal degaussing components, built-in Miller clamp, and built-in snubbers to ensure its reliability in use.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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