X-On Electronics has gained recognition as a prominent supplier of XNS40N120T IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. XNS40N120T IGBT Transistors are a product manufactured by XINER. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

XNS40N120T XINER

XNS40N120T electronic component of XINER
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See Product Specifications
Part No.XNS40N120T
Manufacturer: XINER
Category: IGBT Transistors
Description: TO-247-3 IGBTs ROHS
Datasheet: XNS40N120T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.9498 ea
Line Total: USD 2.95

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 13 Aug to Fri. 16 Aug
MOQ : 1
Multiples : 1
1 : USD 2.9498
10 : USD 2.5938
30 : USD 2.5376
90 : USD 2.4543

   
Manufacturer
Product Category
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Rohs
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We are delighted to provide the XNS40N120T from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XNS40N120T and other electronic components in the IGBT Transistors category and beyond.

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The XNS40N120T is a TO-247-3 IGBT RoHS (Restriction on Hazardous Substances) device manufactured by XINER. The device is a three-pin IGBT with rated VCE (Collector-Emitter Voltage) of 1200 V, IC (Collector Current) of 40 A, ICES (Collector-Emitter Saturation Voltage) of 2.2 V, and tref (Storage Temperature) of -40°C to 150°C. The device also features a gate emitter voltage of ±20V and an isolation voltage of =3000V. The device can be both an N-Channel and P-Channel MOSFET, and is suitable for applications such as motor control, DC-DC power conversion, and power supplies.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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