IGBT - SMPS 600 V, 40 A HGTG20N60A4 Description The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low onstate conduction loss of a www.onsemi.com bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating. C Features 40 A, 600 V T = 110C C Low Saturation Voltage: V = 1.8 V I = 20 A CE(sat) C G Typical Fall Time: 55 ns at T = 125C J Low Conduction Loss E This is a PbFree Device Applications E C UPS, Welder GG TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K 20N60A4 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code 20N60A4 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: February, 2020 Rev. 3 HGTG20N60A4/DHGTG20N60A4 ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise specified) C Parameter Symbol Ratings Unit Collector to Emitter Voltage BV 600 V CES Collector Current Continuous TC = 25C I 70 A C TC = 110C 40 A Collector Current Pulsed (Note 1) I 280 A CM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM Switching Safe Operating Area at T = 150C (Figure 2) SSOA 100 A at 600V J Power Dissipation Total TC = 25C P 290 W D Power Dissipation Derating TC > 25C 2.32 W/C Operating and Storage Junction Temperature Range T T 55 to +150 C J, STG Maximum Lead Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s T 300 C L Package Body for 10 s, See Techbrief 334 T 260 C PKG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Shipping HGTG20N60A4 20N60A4 TO2473LD 450 / Tube ELECTRICAL SPECIFICATIONS (T = 25C, unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit Collector to Emitter Breakdown Voltage BV 600 V I = 250 A, V = 0 V, CES C GE Emitter to Collector Breakdown Voltage BV I = 10 mA, V = 0 V 20 V ECS C GE Collector to Emitter Leakage Current I V = 600 V T = 25C 250 A CES CE J T = 125C 2.0 mA J Collector to Emitter Saturation Voltage V I = 20 A, V = 15 V T = 25C 1.8 2.7 V CE(SAT) C GE J T = 125C 1.6 2.0 V J Gate to Emitter Threshold Voltage V I = 250 A, V = 600 V 4.5 5.5 7.0 V GE(TH) C CE Gate to Emitter Leakage Current I V = 20 V 250 nA GES GE Switching SOA SSOA T = 150C, R = 3 V = 15 V, 100 A J G GE L = 100 H, V = 600 V CE Gate to Emitter Plateau Voltage V I = 20 A, V = 300 V 8.6 V GEP C CE OnState Gate Charge Q I = 20 A, V = 300 V V = 15 V 142 162 nC g(ON) C CE GE V = 20 V 182 210 nC GE Current TurnOn Delay Time t IGBT and Diode at T = 25C, 15 ns d(ON)I J I = 20 A, CE Current Rise Time t 12 ns rI V = 390 V, CE V = 15 V, GE Current TurnOff Delay Time t 73 ns d(OFF)I R = 3 , G L = 500 H, Current Fall Time t 32 ns fI Test Circuit (Figure 20) TurnOn Energy (Note 2) E 105 J ON1 TurnOn Energy (Note 2) E 280 350 J ON2 TurnOff Energy (Note 3) E 150 200 J OFF www.onsemi.com 2