HGTG30N60C3D ON Semiconductor

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V HGTG30N60C3D www.onsemi.com The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar C transistors. The device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25C and G 150C. The IGBT used is the development type TA49051. The diode used in antiparallel with the IGBT is the development type TA49053. E This IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are E essential C G Formerly Developmental Type TA49014. Features 63 A, 600 V at T = 25C C Typical Fall Time 230 ns at T = 150C J TO2473LD SHORT LEAD Short Circuit Rating CASE 340CK JEDEC STYLE Low Conduction Loss Hyperfast AntiParallel Diode This is a PbFree Device MARKING DIAGRAM Y&Z&3&K G30N60C3D Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code G30N60C3D = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: April, 2020 Rev. 2 HGTG30N60C3D/DHGTG30N60C3D ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise specified) C Parameter Symbol HGTG30N60C3D Unit Collector to Emitter Voltage BV 600 V CES Collector Current Continuous I 63 A At T = 25C C25 C I 30 A At T = 110C C110 C Average Diode Forward Current at 110C I 25 A (AVG) Collector Current Pulsed (Note 1) I 252 A CM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM Switching Safe Operating Area at T = 150C SSOA 60 A at 600 V J Power Dissipation Total at T = 25C P 208 W C D Power Dissipation Derating T > 25C 1.67 W/C C Operating and Storage Junction Temperature Range T , T 40 to 150 C J STG Maximum Lead Temperature for Soldering T 260 C L Short Circuit Withstand Time (Note 2) at V = 15 V t 4 s GE SC Short Circuit Withstand Time (Note 2) at V = 10 V t 15 s GE SC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. V = 360 V, T =125C, R = 25 CE(PK) J G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) C Parameter Symbol Test Condition Min Typ Max Unit Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0 V 600 V CES C GE Emitter to Collector Breakdown Voltage BV I = 10 mA, V = 0 V 15 25 V ECS C GE Collector to Emitter Leakage Current I V = BV T = 25C 250 A CES CE CES C V = BV T = 150C 3.0 mA CE CES C Collector to Emitter Saturation Voltage V I = I , V = 15 V T = 25C 1.5 1.8 V CE(SAT) C C110 GE C T = 150C 1.7 2.0 V C Gate to Emitter Threshold Voltage V I = 250 A, V = V T = 25C 3.0 5.2 6.0 V GE(TH) C CE GE C Gate to Emitter Leakage Current I V = 20 V 100 nA GES GE Switching SOA SSOA T = 150C, V = 15 V, V = 480 V 200 A J GE CE(PK) R = 3 , L = 100 H G V = 600 V 60 A CE(PK) Gate to Emitter Plateau Voltage V I = I , V = 0.5 BV 8.1 V GEP C C110 CE CES OnState Gate Charge Q I = I , V = 15 V 162 180 nC G(ON) C C110 GE V = 0.5 BV CE CES V = 20 V 216 250 nC GE Current TurnOn Delay Time t T = 150C, 40 ns d(ON)I J I = I , CE C110 Current Rise Time t 45 ns rI V = 0.8 BV , CE(PK) CES V = 15 V, GE Current TurnOff Delay Time t 320 400 ns d(OFF)I R = 3 , G L = 100 H Current Fall Time t 230 275 ns fI TurnOn Energy E 1050 J ON TurnOff Energy (Note 3) E 2500 J OFF Diode Forward Voltage V I = 30 A 1.75 2.2 V EC EC Diode Reverse Recovery Time t I = 30 A, dI /dt = 100 A/ s 52 60 ns rr EC EC I = 1.0 A, dI /dt = 100 A/ s 42 50 ns EC EC www.onsemi.com 2