UFS Series N-Channel IGBT 70 A, 600 V HGTG40N60B3 The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The much lower www.onsemi.com onstate voltage drop varies only moderately between 25C and 150C. C The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and G drivers for solenoids, relays and contactors. Formerly Developmental Type TA49052. E Features 70 A, 600 V, T = 25C C 600 V Switching SOA Capability Typical Fall Time: 100 ns at T = 150C J Short Circuit Rating Low Conduction Loss This Device is PbFree, Halogen Free/BFR Free and is RoHS TO2473LD Compliant CASE 340CK Packing MARKING DIAGRAMS Y&Z&3&K G40N60B3 Y = ON Semiconductor Logo Figure 1. &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot G40N60B3 = Specific Device Code ORDERING INFORMATION Part Number Package Brand HGTG40N60B3 TO24 G40N60B3 Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: April, 2020 Rev. 4 HGTG40N60B3/DHGTG40N60B3 ABSOLUTE MAXIMUM RATINGS T = 25C Unless Otherwise Specified C Description Symbol Ratings Units Collector to Emitter Voltage BV 600 V CES Collector Current Continuous I At T = 25C C25 C 70 A I At T = 110C C110 C 40 Collector Current Pulsed (Note 1) I 330 A CM V Gate to Emitter Voltage Continuous GES 20 V V Gate to Emitter Voltage Pulsed 30 V GEM SSOA Switching Safe Operating Area at T = 150C, Figure 3 J 100 A at 600 V Power Dissipation Total at T = 25C P 290 W C D Power Dissipation Derating T > 25C 2.33 W/C C Reverse Voltage Avalanche Energy E 100 mJ ARV Operating and Storage Junction Temperature Range T , T 55 to 150 C J STG Maximum Lead Temperature for Soldering T 260 C L t Short Circuit Withstand Time (Note 2) at V = 15 V SC 2 s GE t Short Circuit Withstand Time (Note 2) at V = 10 V SC 10 s GE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. V = 360 V, T = 125C, R = 3 . CE(PK) J G www.onsemi.com 2