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This literature is subject to all applicable copyright laws and is not for resale in any manner.HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes o 24A, 600V at T = 25 C C This family of MOS gated high voltage switching devices o Typical Fall Time at T = 150 C 210ns J combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Low Conduction Loss transistor. The much lower on-state voltage drop varies only Hyperfast Anti-Parallel Diode o o moderately between 25 C and 150 C. The IGBT used is the development type TA49123. The diode used in anti-parallel Packaging with the IGBT is the development type TA49188. JEDEC TO-220AB The IGBT is ideal for many high voltage switching E C applications operating at moderate frequencies where low G conduction losses are essential. COLLECTOR (FLANGE) Formerly Developmental Type TA49182. Ordering Information PART NUMBER PACKAGE BRAND HGTP12N60C3D TO-220AB 12N60C3D JEDEC TO-263AB HGT1S12N60C3DS TO-263AB 12N60C3D COLLECTOR NOTE: When ordering, use the entire part number. Add the suffix 9A (FLANGE) to obtain the TO-263 variant in Tape and Reel, i.e., G HGT1S12N60C3DS9A. E Symbol C G E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2001 Fairchild Semiconductor Corporation HGTP12N60C3D, HGT1S12N60C3DS Rev. B