HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and o 14 A, 600V at T = 25 C HGT1S7N60C3D are MOS gated high voltage switching C devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction o Typical Fall Time...................140ns at T = 150 C J loss of a bipolar transistor. The much lower on-state voltage o o drop varies only moderately between 25 C and 150 C. The Short Circuit Rating IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type Low Conduction Loss TA49057. Hyperfast Anti-Parallel Diode The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49121. JEDEC TO-220AB JEDEC TO-263AB COLLECTOR (FLANGE) GATE COLLECTOR EMITTER (FLANGE) EMITTER COLLECTOR GATE C JEDEC TO-262 EMITTER COLLECTOR GATE G COLLECTOR (FLANGE) E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units BV Collector to Emitter Voltage 600 V CES o I Collector Current Continuous At T = 25C14A C25 C o I Collector Current Continuous At T = 110C7A C110 C o I(AVG) Average Diode Forward Current at 110C8A I Collector Current Pulsed (Note 1) 56 A CM V Gate to Emitter Voltage Continuous 20 V GES V Gate to Emitter Voltage Pulsed 30 V GEM o SSOA Switching Safe Operating Area at T = 150 C (Figure 14) 40A at 480V J o Power Dissipation Total at T = 25C60W C P D o o Power Dissipation Derating T > 25 C 0.487 W/ C C o T , T Operating and Storage Junction Temperature Range -40 to 150 C J STG o T Maximum Lead Temperature for Soldering 260 C L Short Circuit Withstand Time (Note 2) at V = 15V 1 s GE t SC Short Circuit Withstand Time (Note 2) at V = 10V 8 s GE CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. o 2. V = 360V, T = 125 C, R = 50W. CE(PK) J G Thermal Characteristics o Thermal Resistance IGBT 2.1 C/W R JC o Thermal Resistance Diode 2.0 C/W Package Marking and Ordering Information Part Number Package Brand HGTP7N60C3D TO-220AB G7N60C3D HGT1S7N60C3DS TO-263AB G7N60C3D HGT1S7N60C3D TO-262 G7N60C3D NOTES:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A. 2 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1