HGTG7N60A4D, HGTP7N60A4D,
HGT1S7N60A4DS
Data Sheet January 2005
600V, SMPS Series N-Channel IGBT with Features
Anti-Parallel Hyperfast Diode
>100kHz Operation At 390V, 7A
The HGTG7N60A4D, HGTP7N60A4D and
200kHz Operation At 390V, 5A
HGT1S7N60A4DS are MOS gated high voltage switching
600V Switching SOA Capability
devices combining the best features of MOSFETs and
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bipolar transistors. These devices have the high input
Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at T = 125 C
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impedance of a MOSFET and the low on-state conduction
Low Conduction Loss
loss of a bipolar transistor. The much lower on-state voltage
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drop varies only moderately between 25 C and 150 C. The Temperature Compensating SABER Model
IGBT used is the development type TA49331. The diode www.fairchildsemi.com
used in anti-parallel is the development type TA49370.
Packaging
This IGBT is ideal for many high voltage switching
JEDEC STYLE TO-247
applications operating at high frequencies where low
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conduction losses are essential. This device has been
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optimized for high frequency switch mode power
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supplies.
Formerly Developmental Type TA49333.
COLLECTOR
Ordering Information
(FLANGE)
PART NUMBER PACKAGE BRAND
HGTG7N60A4D TO-247 G7N60A4D
HGTP7N60A4D TO-220AB G7N60A4D
JEDEC TO-220AB
HGT1S7N60A4DS TO-263AB G7N60A4D
E
NOTE: When ordering, use the entire part number. Add the suffix 9A C
G
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
Symbol
COLLECTOR
C
(FLANGE)
G JEDEC TO-263AB
E
COLLECTOR
G (FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
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Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
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ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV 600 V
CES
Collector Current Continuous
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At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 34 A
C C25
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At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 14 A
C C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I 56 A
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 20 V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 30 V
GEM
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Switching Safe Operating Area at T = 150 C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 35A at 600V
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Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 125 W
C D
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Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/ C
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Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T -55 to 150 C
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Maximum Lead Temperature for Soldering
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Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T 300 C
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Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 260 C
PKG
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
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Electrical Specifications T = 25 C, Unless Otherwise Specified
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PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0V 600 - - V
CES C GE
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Collector to Emitter Leakage Current I V = 600V T = 25 C - - 250 A
CES CE J
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T = 125C- - 2 mA
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Collector to Emitter Saturation Voltage V I = 7A, T = 25C- 1.9 2.7 V
CE(SAT) C J
V = 15V
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T = 125C- 1.6 2.2 V
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Gate to Emitter Threshold Voltage V I = 250 A, V = 600V 4.5 5.9 7 V
GE(TH) C CE
Gate to Emitter Leakage Current I V = 20V - - 250 nA
GES GE
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Switching SOA SSOA T = 150 C, R = 25 , V = 15V, 35 - - A
J G GE
L = 100 H, V = 600V
CE
Gate to Emitter Plateau Voltage V I = 7A, V = 300V - 9 - V
GEP C CE
On-State Gate Charge Q I = 7A, V = 15V - 37 45 nC
g(ON) C GE
V = 300V
CE
V = 20V - 48 60 nC
GE
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Current Turn-On Delay Time t IGBT and Diode at T = 25 C, -11 - ns
d(ON)I J
I = 7A,
CE
Current Rise Time t -11 - ns
rI
V = 390V,
CE
Current Turn-Off Delay Time t V = 15V, - 100 - ns
d(OFF)I GE
R = 25,
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Current Fall Time t -45 - ns
fI
L = 1mH,
Turn-On Energy E Test Circuit (Figure 24) -55 - J
ON1
Turn-On Energy E - 120 150 J
ON2
Turn-Off Energy (Note 2) E -60 75 J
OFF
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Current Turn-On Delay Time t IGBT and Diode at T = 125 C, -10 - ns
d(ON)I J
I = 7A,
CE
Current Rise Time t -7 - ns
rI
V = 390V, V = 15V,
CE GE
Current Turn-Off Delay Time t R = 25, - 130 150 ns
d(OFF)I G
L = 1mH,
Current Fall Time t -75 85 ns
fI
Test Circuit (Figure 24)
Turn-On Energy (Note 2) E -50 - J
ON1
Turn-On Energy (Note 2) E - 200 215 J
ON2
Turn-Off Energy (Note 3) E - 125 170 J
OFF
2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1