X-On Electronics has gained recognition as a prominent supplier of RGTH60TS65GC11 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RGTH60TS65GC11 IGBT Transistors are a product manufactured by ROHM. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RGTH60TS65GC11 ROHM

RGTH60TS65GC11 electronic component of ROHM
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Part No.RGTH60TS65GC11
Manufacturer: ROHM
Category: IGBT Transistors
Description: ROHM Semiconductor IGBT Transistors
Datasheet: RGTH60TS65GC11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.433 ea
Line Total: USD 4.43 
Availability - 215
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 RGTH60TS65GC11 More Buying Options & Price Grid(s)

Availability Price Quantity
215
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.433
10 : USD 4.411
25 : USD 2.948
100 : USD 2.233
250 : USD 2.057
450 : USD 1.903
900 : USD 1.815

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RGTH60TS65GC11 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RGTH60TS65GC11 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

RGTH60TS65 650V 30A Field Stop Trench IGBT Datasheet Outline TO-247N V 650V CES I 30A C(100C) V 1.6V CE(sat) (Typ.) P 194W (1)(2)(3) D Features Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) High Speed Switching (2) Collector 3) Low Switching Loss & Soft Switching (1) (3) Emitter 4) Pb - free Lead Plating RoHS Compliant (3) Applications Packaging Specifications PFC Packaging Tube UPS Reel Size (mm) - Power Conditioner Tape Width (mm) - Type IH Basic Ordering Unit (pcs) 450 Packing code C11 RGTH60TS65 Marking Absolute Maximum Ratings (at T = 25C unless otherwise specified) C Parameter Symbol Value Unit V Collector - Emitter Voltage 650 V CES V Gate - Emitter Voltage 30 V GES T = 25C I 58 A C C Collector Current T = 100C I 30 A C C *1 Pulsed Collector Current I 120 A CP T = 25C P 194 W C D Power Dissipation T = 100C P 97 W C D Operating Junction Temperature T C 40 to +175 j T Storage Temperature 55 to +175 C stg *1 Pulse width limited by T jmax. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 1/9Data Sheet RGTH60TS65 Thermal Resistance Values Parameter Symbol Unit Min. Typ. Max. R Thermal Resistance IGBT Junction - Case - - 0.77 C/W (j-c) IGBT Electrical Characteristics (at T = 25C unless otherwise specified) j Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector - Emitter Breakdown BV I = 10A, V = 0V 650 -- V CES C GE Voltage Collector Cut - off Current I V = 650V, V = 0V -- 10 A CES CE GE Gate - Emitter Leakage Current I V = 30V, V = 0V - - nA 200 GES GE CE Gate - Emitter Threshold V V = 5V, I = 21.0mA 4.5 5.5 6.5 V GE(th) CE C Voltage I = 30A, V = 15V C GE Collector - Emitter Saturation V T = 25C - 1.6 2.1 V CE(sat) j Voltage T = 175C - 2.1 - j www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.10 - Rev.C 2/9

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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