UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a www.onsemi.com MOSFET and the low onstate conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately C between 25C and 150C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and G drivers for solenoids, relays and contactors. Formerly developmental type TA49050. E Features E C 40 A, 600 V at T = 25C C G 600 V Switching SOA Capability Typical Fall Time 140 ns at 150C COLLECTOR (FLANGE) Short Circuit Rated Low Conduction Loss TO2473LD SHORT LEAD Related Literature CASE 340CK JEDEC STYLE TB334 Guidelines for Soldering Surface Mount Components to PC Boards This is a PbFree Device MARKING DIAGRAM Y&Z&3&K HG20N60B3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code HG20N60B3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: April, 2020 Rev. 2 HGTG20N60B3/DHGTG20N60B3 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise specified) C Parameter Symbol HGTG20N60B3 Unit Collector to Emitter Voltage BV 600 V CES Collector to Gate Voltage, R = 1 M BV 600 A GE CGR Collector Current Continuous I 40 A At T = 25C C25 C I 20 A At T = 110C C110 C Collector Current Pulsed (Note 1) I 160 A CM Gate to Emitter Voltage Continuous V 20 V GES Gate to Emitter Voltage Pulsed V 30 V GEM Switching Safe Operating Area at T = 150C SSOA 30 A at 600 V C Power Dissipation Total at T = 25C P 165 W C D Power Dissipation Derating T > 25C 1.32 W/C C Operating and Storage Junction Temperature Range T , T 40 to 150 C J STG Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s T 300 C L Package Body for 10 s, see Tech Brief 334 T 260 C pkg Short Circuit Withstand Time (Note 2) at V = 15 V t 4 s GE SC Short Circuit Withstand Time (Note 2) at V = 10 V t 10 s GE SC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. V = 360 V, T =125C, R = 25 CE C G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) C Parameter Symbol Test Condition Min Typ Max Unit Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0 V 600 V CES C GE Emitter to Collector Breakdown Voltage BV I = 10 mA, V = 0 V 20 V ECS C GE Collector to Emitter Leakage Current I V = BV T = 25C 250 A CES CE CES C T = 150C 1.0 mA C Collector to Emitter Saturation Voltage V I = I , V = 15 V T = 25C 1.8 2.0 V CE(SAT) C C110 GE C T = 150C 2.1 2.5 V C Gate to Emitter Threshold Voltage V I = 250 A, V = V 3.0 5.0 6.0 V GE(TH) C CE GE Gate to Emitter Leakage Current I V = 20 V 100 nA GES GE Switching SOA SSOA T = 150C, V = 15 V, V = 480 V 100 A C GE CE R = 10 , L = 45 H G V = 600 V 30 A CE Gate to Emitter Plateau Voltage V I = I , V = 0.5 BV 8.0 V GEP C C110 CE CES OnState Gate Charge Q I = I , V = 15 V 80 105 nC G(ON) C C110 GE V = 0.5 BV CE CES V = 20 V 105 135 nC GE Current TurnOn Delay Time t T = 150C, 25 ns d(ON)I J I = I , CE C110 Current Rise Time t 20 ns rI V = 0.8 BV , CE CES V = 15 V, GE Current TurnOff Delay Time t 220 275 ns d(OFF)I R = 10 , G Current Fall Time t 140 175 ns fI L = 100 H TurnOn Energy E 475 J ON TurnOff Energy (Note 3) E 1050 J OFF Thermal Resistance R 0.76 C/W JC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. TurnOff Energy Loss (E ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and OFF ending at the point where the collector current equals zero (I = 0 A). The HGTG20N60B3 was tested per JEDEC standard No. 241 Method CE for Measurement of Power Device TurnOff Switching Loss. This test method produces the true total TurnOff Energy Loss. TurnOn losses include diode losses. www.onsemi.com 2