IGBT - NPT 1200 V HGTG18N120BND Description HGTG18N120BND is based on Non Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching www.onsemi.com applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and C power supplies. Features 26 A, 1200 V, T = 110C C Low Saturation Voltage: V (sat) = 2.45 V I = 18 A G CE C Typical Fall Time . 140 ns at T = 150C J Short Circuit Rating E Low Conduction Loss This Device is PbFree E C G TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K 18N120BND Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code 18N120BND = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: February, 2020 Rev. 3 HGTG18N120BND/DHGTG18N120BND ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Description Ratings Unit BV Collector to Emitter Voltage 1200 V CES I Collector Current Continuous T = 25C 54 A C C T = 110C 26 A C I Collector Current Pulsed (Note 1) T = 25C 160 A CM C V Gate to Emitter Voltage Continuous 20 V GES V Gate to Emitter Voltage Pulsed 30 V GEM SSOA Switching Safe Operating Area at T = 150C (Figure 2) 100 A at 1200 V J P Power Dissipation Total T = 25C 390 W D C Power Dissipation Derating T > 25C 3.12 W/C C T T Operating and Storage Junction Temperature Range 55 to +150 C J, STG T Maximum Lead Temp. for Soldering 260 C L T Short Circuit Withstand Time (Note 2) V = 15 V 8 s SC GE Short Circuit Withstand Time (Note 2) V = 12 V 15 s GE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. V = 960 V, T = 125C, R = 3 CE(PK) J G PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Shipping HGTG18N120BND 18N120BND TO247 Tube 450/Tube ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Collector to Emitter Breakdown Voltage 1200 V I = 250 A, V = 0 V CES C GE BV Emitter to Collector Breakdown Voltage I = 10 mA, V = 0 V 15 V ECS C GE I Collector to Emitter Leakage Current A V = 1200 V, T = 25C 250 CES CE C V = 1200 V, T = 125C 300 A GE C V = 1200 V, T = 150C 4 mA GE C Collector to Emitter Saturation Voltage I = 18 A, V = 15 V, 2.45 2.7 V V C GE CE(SAT) T = 25C C I = 18 A, V = 15 V, 3.8 4.2 V C GE T = 150C C V Gate to Emitter Threshold Voltage I = 150 A, V = V 6.0 7.0 V GE(th) C CE GE I Gate to Emitter Leakage Current V = 20 V 250 nA GES GE T = 150C, R = 3 SSOA Switching SOA 100 A J G V = 15 V, L = 200 H, GE V = 1200 V CE(PK) V Gate to Emitter Leakage Current GEP I = 18 A, V = 600 V 10.5 V C CE I = 18 A, V = 600 V, Q OnState Gate Charge 165 200 nC G(ON) C CE V = 15 V GE I = 18 A, V = 600 V, 220 250 nC C CE V = 20 V GE www.onsemi.com 2