X-On Electronics has gained recognition as a prominent supplier of HGT1S10N120BNST IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. HGT1S10N120BNST IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

HGT1S10N120BNST ON Semiconductor

HGT1S10N120BNST electronic component of ON Semiconductor
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See Product Specifications
Part No.HGT1S10N120BNST
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: Transistor: IGBT; 1.2kV; 17A; 298W; D2PAK
Datasheet: HGT1S10N120BNST Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.8098 ea
Line Total: USD 2.81

Availability - 600
Ship by Tue. 06 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
515
Ship by Tue. 06 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 2.899
5 : USD 2.574
8 : USD 2.236
21 : USD 2.106
800 : USD 2.028

   
Manufacturer
Product Category
Power Dissipation
Kind Of Package
Case
Mounting
Type Of Transistor
Pulsed Collector Current
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
Gate Charge
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HGT1S10N120BNST from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HGT1S10N120BNST and other electronic components in the IGBT Transistors category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features o The HGTG10N120BN, HGTP10N120BN and 35A, 1200V, T = 25 C C HGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high o Typical Fall Time 140ns at T = 150 C voltage switching IGBT family. IGBTs combine the best J features of MOSFETs and bipolar transistors. This device Short Circuit Rating has the high input impedance of a MOSFET and the low on- Low Conduction Loss state conduction loss of a bipolar transistor. Avalanche Rated The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Thermal Impedance SPICE Model conduction losses are essential, such as: AC and DC motor Temperature Compensating SABER Model www.fairchildsemi.com controls, power supplies and drivers for solenoids, relays and contactors. Related Literature - TB334 Guidelines for Soldering Surface Mount Formerly Developmental Type TA49290. Components to PC Boards Ordering Information Packaging PART NUMBER PACKAGE BRAND JEDEC STYLE TO-247 HGTG10N120BN TO-247 G10N120BN E C HGTP10N120BN TO-220AB 10N120BN COLLECTOR G (FLANGE) HGT1S10N120BNS TO-263AB 10N120BN NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g. HGT1S10N120BNST. Symbol C JEDEC TO-220AB (ALTERNATE VERSION) G COLLECTOR E (FLANGE) C G E JEDEC TO-263AB COLLECTOR (FLANGE) G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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