X-On Electronics has gained recognition as a prominent supplier of HGTD1N120BNS9A IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. HGTD1N120BNS9A IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

HGTD1N120BNS9A ON Semiconductor

HGTD1N120BNS9A electronic component of ON Semiconductor
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Part No.HGTD1N120BNS9A
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
Datasheet: HGTD1N120BNS9A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.804 ea
Line Total: USD 1.8 
Availability - 61139
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
61139
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 1.804
10 : USD 1.309
100 : USD 0.9218
500 : USD 0.7513
1000 : USD 0.7359

   
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
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Pd - Power Dissipation
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Maximum Operating Temperature
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Continuous Collector Current Ic Max
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We are delighted to provide the HGTD1N120BNS9A from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HGTD1N120BNS9A and other electronic components in the IGBT Transistors category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features o The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, T = 25 C C Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs o 120 J at T = 150 C combine the best features of MOSFETs and bipolar Typical E OFF J transistors. This device has the high input impedance of a Short Circuit Rating MOSFET and the low on-state conduction loss of a bipolar Low Conduction Loss transistor. Avalanche Rated The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low Temperature Compensating SABER Model conduction losses are essential, such as: AC and DC motor Thermal Impedance SPICE Model www.fairchildsemi.com controls, power supplies and drivers for solenoids, relays and contactors. Related Literature - TB334, Guidelines for Soldering Surface Mount Formerly Developmental Type TA49316. Components to PC Boards Ordering Information Packaging PART NUMBER PACKAGE BRAND JEDEC TO-220AB HGTD1N120BNS TO-252AA 1N120B E HGTP1N120BN TO-220AB 1N120BN C G NOTE: When ordering, use the entire part number. Add the sufx 9A to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A COLLECTOR (FLANGE) Symbol C JEDEC TO-252AA G COLLECTOR (FLANGE) G E E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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