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HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features o The HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at T = 25 C C high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the o = 150 C high input impedance of a MOSFET and the low on-state Typical Fall Time 140ns at T J conduction loss of a bipolar transistor. The much lower Short Circuit Rating o on-state voltage drop varies only moderately between 25 C o Low Conduction Loss and 150 C. The IGBT is ideal for many high voltage switching Packaging applications operating at moderate frequencies where low JEDEC TO-220AB conduction losses are essential, such as: AC and DC motor EMITTER COLLECTOR controls, power supplies and drivers for solenoids, relays and GATE contactors. Formerly Developmental Type TA49115. Ordering Information COLLECTOR (FLANGE) PART NUMBER PACKAGE BRAND HGTD7N60C3S TO-252AA G7N60C JEDEC TO-252AA HGTP7N60C3 TO-220AB G7N60C3 NOTE: When ordering, use the entire part number. Add the sufx 9A COLLECTOR GATE to obtain the TO-252AA variant in tape and reel, i.e. (FLANGE) HGTD7N60C3S9A. EMITTER Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2001 Fairchild Semiconductor Corporation HGTD7N60C3S, HGTP7N60C3 Rev. B