HGTG10N120BN, HGTP10N120BN,
HGT1S10N120BNS
Data Sheet August 2002
35A, 1200V, NPT Series N-Channel IGBT Features
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The HGTG10N120BN, HGTP10N120BN and
35A, 1200V, T = 25 C
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HGT1S10N120BNS are Non-Punch Through (NPT) IGBT
1200V Switching SOA Capability
designs. They are new members of the MOS gated high
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Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C
voltage switching IGBT family. IGBTs combine the best
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features of MOSFETs and bipolar transistors. This device
Short Circuit Rating
has the high input impedance of a MOSFET and the low on-
Low Conduction Loss
state conduction loss of a bipolar transistor.
Avalanche Rated
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
Thermal Impedance SPICE Model
conduction losses are essential, such as: AC and DC motor Temperature Compensating SABER Model
www.fairchildsemi.com
controls, power supplies and drivers for solenoids, relays
and contactors.
Related Literature
- TB334 Guidelines for Soldering Surface Mount
Formerly Developmental Type TA49290.
Components to PC Boards
Ordering Information
Packaging
PART NUMBER PACKAGE BRAND
JEDEC STYLE TO-247
HGTG10N120BN TO-247 G10N120BN
E
C
HGTP10N120BN TO-220AB 10N120BN
COLLECTOR
G
(FLANGE)
HGT1S10N120BNS TO-263AB 10N120BN
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNST.
Symbol
C
JEDEC TO-220AB (ALTERNATE VERSION)
G
COLLECTOR
E
(FLANGE)
C
G
E
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
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Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
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HGTG10N120BN
HGTP10N120BN
HGT1S10N120BNS UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV 1200 V
CES
Collector Current Continuous
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At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 35 A
C C25
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At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 17 A
C C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 80 A
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 20 V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V 30 V
GEM
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Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V
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Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 298 W
C D
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Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/ C
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Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E 80 mJ
AV
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Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T -55 to 150 C
J STG
Maximum Temperature for Soldering
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Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 300 C
L
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Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T 260 C
pkg
Short Circuit Withstand Time (Note 3) at V = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t 8 s
GE SC
Short Circuit Withstand Time (Note 3) at V = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t 15 s
GE SC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
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2. I = 20A, L = 400 H, T = 25 C.
CE J
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3. V = 840V, T = 125 C, R = 10.
CE(PK) J G
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Electrical Specifications T = 25 C, Unless Otherwise Specified
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PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0V 1200 - - V
CES C GE
Emitter to Collector Breakdown Voltage BV I = 10mA, V = 0V 15 - - V
ECS C GE
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Collector to Emitter Leakage Current I V = 1200V T = 25 C - - 250 A
CES CE C
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T = 125 C - 150 - A
C
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T = 150C- - 2 mA
C
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Collector to Emitter Saturation Voltage V I = 10A, T = 25 C - 2.45 2.7 V
CE(SAT) C C
V = 15V
GE
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T = 150C- 3.7 4.2 V
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Gate to Emitter Threshold Voltage V I = 90 A, V = V 6.0 6.8 - V
GE(TH) C CE GE
Gate to Emitter Leakage Current I V = 20V - - 250 nA
GES GE
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Switching SOA SSOA T = 150 C, R = 10, V = 15V, 55 - - A
J G GE
L = 400 H, V = 1200V
CE(PK)
Gate to Emitter Plateau Voltage V I = 10A, V = 600V - 10.4 - V
GEP C CE
On-State Gate Charge Q I = 10A, V = 15V - 100 120 nC
G(ON) C GE
V = 600V
CE
V = 20V - 130 150 nC
GE
2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1