X-On Electronics has gained recognition as a prominent supplier of GT50JR22(STA1,E,S) igbt transistors across the USA, India, Europe, Australia, and various other global locations. GT50JR22(STA1,E,S) igbt transistors are a product manufactured by Toshiba. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

GT50JR22(STA1,E,S) Toshiba

GT50JR22(STA1,E,S) electronic component of Toshiba
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Part No.GT50JR22(STA1,E,S)
Manufacturer: Toshiba
Category:IGBT Transistors
Description: IGBT Transistors IGBT for Soft Switching Apps
Datasheet: GT50JR22(STA1,E,S) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.4759 ea
Line Total: USD 6.48

Availability - 66
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
263 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 6.045
3 : USD 5.434
4 : USD 4.173
11 : USD 3.939

     
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We are delighted to provide the GT50JR22(STA1,E,S) from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT50JR22(STA1,E,S) and other electronic components in the IGBT Transistors category and beyond.

: The GT50JR22(STA1,E,S) part is a thyristor module produced by Toshiba. It is a silicon- controlled rectifier (SCR) rated at 1200 volts and 50 amperes. It is constructed with an internally isolated base and includes an SMB mounting base with stainless steel screws. The module is suitable for use in applications such as motor control, welding machines, and light dimming. It is also resistant to surge current and overvoltage (3.5kV peak voltage maximum). The GT50JR22(STA1,E,S) is able to operate in a wide temperature range of -40C to +125C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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TOSHIBA SEMICONDUCTORS
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