X-On Electronics has gained recognition as a prominent supplier of GT50JR22(STA1,E,S) IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. GT50JR22(STA1,E,S) IGBT Transistors are a product manufactured by Toshiba. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

GT50JR22(STA1,E,S) Toshiba

Name: GT50JR22(STA1,E,S)
Brand: Toshiba
SKU: GT50JR22STA1ES_1_Toshiba
Availability: InStock
Rating: 5 (11 reviews)

GT50JR22(STA1,E,S) electronic component of Toshiba

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See Product Specifications

Part No.	GT50JR22(STA1,E,S)
Manufacturer:	Toshiba
Category:	IGBT Transistors
Description:	IGBT Transistors IGBT for Soft Switching Apps
Datasheet:	GT50JR22(STA1,E,S) Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 5.544 ea
Line Total: USD 5.54

Availability - 94
Ship by Wed. 25 Dec to Fri. 27 Dec

MOQ: 1 Multiples: 1
Pack Size: 1

GT50JR22(STA1,E,S) More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

94

Ship by Wed. 25 Dec to Fri. 27 Dec

MOQ : 1
Multiples : 1

1 : USD 5.544
4 : USD 4.326
10 : USD 4.312
11 : USD 4.088
25 : USD 4.046
100 : USD 3.92

Specifications

Manufacturer
Toshiba Toshiba

Product Category
IGBT Transistors IGBT Transistors

RoHS - XON
Y Y

Technology
Si Si

Technology
Si Si

Series
Gt50jr22 Gt50jr22

Brand
Toshiba Toshiba

Cnhts
8541210000 8541210000

Hts Code
8536507000 8536507000

Product Type
Igbt Transistors Igbt Transistors

Factory Pack Quantity :
25 25

Subcategory
Igbts Igbts

Taric
8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

GT50JR22(STA1,E,S) Alternative Parts

We are delighted to provide the GT50JR22(STA1,E,S) from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT50JR22(STA1,E,S) and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

: The GT50JR22(STA1,E,S) part is a thyristor module produced by Toshiba. It is a silicon- controlled rectifier (SCR) rated at 1200 volts and 50 amperes. It is constructed with an internally isolated base and includes an SMB mounting base with stainless steel screws. The module is suitable for use in applications such as motor control, welding machines, and light dimming. It is also resistant to surge current and overvoltage (3.5kV peak voltage maximum). The GT50JR22(STA1,E,S) is able to operate in a wide temperature range of -40C to +125C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
94 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 5.544 4 : USD 4.326 10 : USD 4.312 11 : USD 4.088 25 : USD 4.046 100 : USD 3.92

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Hot	GT60M303(Q) Trans IGBT Chip N-CH 900V 60A 3-Pin(3+Tab) TO-3P(LH) Stock : 0 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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