IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 600V CES C I = 40A, T =100C C C E E E E t 5s, T = 175C E SC J(max) G C C C C C G G G G G E IRGP4640D-EPbF V typ. = 1.60V IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF CE(ON) 2 TO-247AD D Pak TO-247AC TO-262Pak TO-220AC n-channel Applications G C E Industrial Motor Drive Gate Collector Emitter Inverters UPS Welding Features Benefits Low V and switching losses High efficiency in a wide range of applications and switching CE(ON) Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175C performance and high power capability Positive V temperature coefficient Excellent current sharing in parallel operation CE (ON) 5s Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 50 IRGS4640DPbF 2 IRGS4640DPbF D Pak Tape and Reel Right 800 IRGS4640DTRRPbF Tape and Reel Left 800 IRGS4640DTRLPbF IRGSL4640DPbF TO-262 Tube 50 IRGSL4640DPbF IRGB4640DPbF TO-220AB Tube 50 IRGB4640DPbF IRGP4640DPbF TO-247AC Tube 25 IRGP4640DPbF IRGP4640D-EPbF TO-247AD Tube 25 IRGP4640D-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 65 C C I T = 100C Continuous Collector Current 40 C C A I Pulse Collector Current, V = 15V 72 CM GE I Clamped Inductive Load Current, V = 20V 96 LM GE I T = 25C Diode Continuous Forward Current 65 F C I T = 100C Diode Continuous Forward Current 40 F C I Diode Maximum Forward Current 96 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate to Emitter Voltage 30 P T = 25C Maximum Power Dissipation 250 D C W P T = 100C Maximum Power Dissipation 125 D C T Operating Junction and -55 to +175 J T Storage Temperature Range STG C Soldering Temperature, for 10 sec. (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247) 10 lbfin (1.1 Nm) Notes through are on page 8 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback January 20, 2015 IRGS/SL/B/P4640D/EPbF Thermal Resistance Parameter Min. Typ. Max. Units 2 Thermal Resistance Junction-to-Case (D Pak, TO-220, TO-262) 0.60 R (IGBT) JC 0.60 Thermal Resistance Junction-to-Case (TO-247) 2 Thermal Resistance Junction-to-Case (D Pak, TO-220, TO-262) 1.53 R (Diode) JC Thermal Resistance Junction-to-Case (TO-247) 1.62 2 Thermal Resistance, Case-to-Sink (flat, greased surface TO 220, D Pak, TO-262) 0.50 C/W R CS Thermal Resistance, Case-to-Sink (flat, greased surface TO 247) 0.24 2 Thermal Resistance, Junction-to-Ambient (PCB Mount - D Pak, TO-262) 40 Thermal Resistance, Junction-to-Ambient (Socket Mount TO-247) 40 R JA Thermal Resistance, Junction-to-Ambient (Socket Mount TO-220) 62 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 1mA (25C-175C) V /T (BR)CES J GE C 1.60 1.90 I = 24A, V = 15V, T = 25C C GE J 1.90 V I = 24A, V = 15V, T = 150C C GE J V Collector-to-Emitter Saturation Voltage CE(on) 2.0 I = 24A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 700A GE(th) CE GE C Threshold Voltage Temp. Coefficient -18 mV/C V = V , I = 1.0mA (25C-175C) V /T CE GE C GE(th) J gfe Forward Transconductance 17 S V = 50V, I = 24A, PW = 80s CE C 2.0 25 A V = 0V, V = 600V GE CE I Collector-to-Emitter Leakage Current CES 775 V = 0V, V = 600V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE 1.8 2.6 V I = 24A F V Diode Forward Voltage Drop FM 1.28 I = 24A, T = 175C F J 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback January 20, 2015