IRGP4066PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4066-EPbF Features C Low V Trench IGBT Technology CE (ON) V = 600V CES Low Switching Losses Maximum Junction Temperature 175 C I = 75A C(Nominal) 5 S short circuit SOA Square RBSOA G t 5s, T = 175C SC J(max) 100% of The Parts Tested for I LM Positive V Temperature Coefficient E CE (ON) V typ. = 1.7V CE(on) Tight Parameter Distribution n-channel Lead Free Package C C Benefits High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to E E C C Low V and Low Switching Losses CE (ON) G G Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation TO-247AC TO-247AD IRGP4066PbF IRGP4066-EPbF G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 140 C C I T = 100C Continuous Collector Current 90 C C I NOMINAL Nominal Current 75 I Pulse Collector Current, V = 15V 225 A CM GE I Clamped Inductive Load Current, V = 20V 300 LM GE V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 454 W D C P T = 100C Maximum Power Dissipation 227 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R Thermal Resistance Junction-to-Case 0.33 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 10/8/2010IRGP4066PbF/IRGP4066-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage V = 0V, I = 100 A 600 V (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 260 mV/C V = 0V, I = 2.0mA (25C-175C) (BR)CES J GE C 1.7 2.1 V I = 75A, V = 15V, T = 25C C GE J V I = 75A, V = 15V, T = 150C Collector-to-Emitter Saturation Voltage 2.0 V CE(on) C GE J 2.1 I = 75A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 2.1mA GE(th) CE GE C V /TJ V = V , I = 2.1mA (25C - 175C) Threshold Voltage temp. coefficient -16 mV/C GE(th) CE GE C gfe Forward Transconductance 50 S V = 50V, I = 75A, PW = 60s CE C I V = 0V, V = 600V Collector-to-Emitter Leakage Current 1.0 100 A CES GE CE 1040 V = 0V, V = 600V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 200 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 150 225 I = 75A g C Q Gate-to-Emitter Charge (turn-on) 40 60 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 60 90 V = 400V gc CC E I = 75A, V = 400V, V = 15V Turn-On Switching Loss 2465 3360 on C CC GE E Turn-Off Switching Loss 2155 3040 J R = 10, L = 200 H, T = 25C off G J E Energy losses include tail & diode reverse recovery Total Switching Loss 4620 6400 total t Turn-On delay time 50 70 I = 75A, V = 400V, V = 15V d(on) C CC GE t Rise time 70 90 ns R = 10, L = 200 H, T = 25C r G J t Turn-Off delay time 200 225 d(off) t Fall time 60 80 f E I = 75A, V = 400V, V =15V Turn-On Switching Loss 3870 on C CC GE E Turn-Off Switching Loss 2815 J R =10 , L=200H,T = 175C off G J E Total Switching Loss 6685 Energy losses include tail & diode reverse recovery total t I = 75A, V = 400V, V = 15V Turn-On delay time 50 d(on) C CC GE t Rise time 70 ns R = 10, L = 200 H r G t Turn-Off delay time 240 T = 175C d(off) J t Fall time 70 f C Input Capacitance 4440 pF V = 0V ies GE C Output Capacitance 245 V = 30V oes CC C Reverse Transfer Capacitance 130 f = 1.0Mhz res T = 175C, I = 300A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp = 600V CC Rg = 10, V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 5 s V = 400V, Vp 600V CC Rg = 10, V = +15V to 0V GE Notes: V = 80% (V ), V = 20V, L = 10H, R = 10. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J 2 www.irf.com