INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE V = 600V CES C C C I = 60A, T = 100C C C t 5s, T = 175C SC J(max) G E E C C G G V typ. = 1.60V I = 48A CE(on) C E TO-247AC TO-247AD n-channel IRGP4660DPbF IRGP4660D-EP Applications Industrial Motor Drive GC E Inverters Gate Collector Emitter UPS Welding Features Benefits High efficiency in a wide range of applications and switching Low V and Switching Losses CE(ON) frequencies Improved reliability due to rugged hard switching performance Square RBSOA and Maximum Junction Temperature 175C and higher power capability Positive V Temperature Coefficient Excellent current sharing in parallel operation CE (ON) 5s short circuit SOA Enables short circuit protection scheme Lead-Free, RoHS compliant Environmentally friendly Standard Pack Base part number Package Type Orderable part number Form Quantity IRGP4660DPbF TO-247AC Tube 25 IRGP4660DPbF IRGP4660D-EPbF TO-247AD Tube 25 IRGP4660D-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 100 C C I T = 100C Continuous Collector Current 60 C C Pulse Collector Current, V = 15V 144 ICM GE I Clamped Inductive Load Current, V = 20V 192 A LM GE I T = 25C Diode Continous Forward Current 100 F C I T = 100C Diode Continous Forward Current 60 F C Diode Maximum Forward Current I 192 FM Continuous Gate-to-Emitter Voltage 20 V VGE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 330 D C W P T = 100C Maximum Power Dissipation 170 D C T Operating Junction and -55 to +175 J Storage Temperature Range C TSTG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Junction-to-Case (IGBT) R (IGBT) 0.45 JC Junction-to-Case (Diode) R (Diode) 0.92 JC C/W R Case-to-Sink (flat, greased surface) 0.24 CS R Junction-to-Ambient (typical socket mount) 40 JA Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 150A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 0.30 V/C V = 0V, I = 1mA (25C-175C) (BR)CES J GE C 1.60 1.90 I = 48A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 1.90 V I = 48A, V = 15V, T = 150C CE(on) C GE J 2.00 I = 48A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 1.4mA GE(th) CE GE C V /T Threshold Voltage temp. coefficient -21 mV/C V = V , I = 1.0mA (25C - 175C) GE(th) J CE GE C gfe Forward Transconductance 32 S V = 50V, I = 48A, PW = 80s CE C I Collector-to-Emitter Leakage Current 1.0 150 V = 0V, V = 600V CES GE CE A 450 1000 V = 0V, V = 600V, T = 175C GE CE J V Diode Forward Voltage Drop 1.95 2.91 I = 48A FM F V 1.45 I = 48A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE = 25C (unless otherwise specified) Switching Characteristics TJ Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 95 140 I = 48A g C Q Gate-to-Emitter Charge (turn-on) 28 42 nC V = 15V ge GE Gate-to-Collector Charge (turn-on) 35 53 V = 400V Q gc CC E Turn-On Switching Loss 625 1141 I = 48A, V = 400V, V = 15V on C CC GE E Turn-Off Switching Loss 1275 1481 JR = 10, L = 200H, L = 150nH, T = 25C off G S J Energy losses include tail & diode reverse recovery E Total Switching Loss 1900 2622 total t Turn-On delay time 60 78 I = 48A, V = 400V, V = 15V d(on) C CC GE t Rise time 4056ns R = 10, L = 200H, L = 150nH, T = 25C r G S J t Turn-Off delay time 145 176 d(off) t Fall time 35 46 f E Turn-On Switching Loss 1625 I = 48A, V = 400V, V =15V on C CC GE E Turn-Off Switching Loss 1585 JR =10, L=200H, L =150nH, T = 175C off G S J Energy losses include tail & diode reverse recovery E Total Switching Loss 3210 total t Turn-On delay time 55 I = 48A, V = 400V, V = 15V d(on) C CC GE t Rise time 45 ns R = 10, L = 200H, L = 150nH r G S t Turn-Off delay time 165 T = 175C d(off) J t Fall time 45 f C Input Capacitance 3025 pF V = 0V ies GE C Output Capacitance 245 V = 30V oes CC C Reverse Transfer Capacitance 90 f = 1.0Mhz res T = 175C, I = 192A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CC Rg = 10, V = +15V to 0V GE SCSOA Short Circuit Safe Operating Area 5 sV = 400V, Vp =600V CC Rg = 10, V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 845 JT = 175C J t Diode Reverse Recovery Time 115 ns V = 400V, I = 48A rr CC F I Peak Reverse Recovery Current 40 A V = 15V, Rg = 10, L =200H, L = 150nH rr GE s Notes: V = 80% (V ), V = 20V, L = 200H, R = 10. CC CES GE G R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement.