X-On Electronics has gained recognition as a prominent supplier of GT50J325 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. GT50J325 IGBT Transistors are a product manufactured by Toshiba. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

GT50J325 Toshiba

GT50J325 electronic component of Toshiba
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Part No.GT50J325
Manufacturer: Toshiba
Category: IGBT Transistors
Description: IGBT, 600V, TO-3P(LH)
Datasheet: GT50J325 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.6095 ea
Line Total: USD 12.61 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 12.6095
5 : USD 8.8661
10 : USD 6.742
50 : USD 6.0712

   
Manufacturer
Product Category
Brand
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Current Ic Continuous A Max
Fall Time Typ
Junction Temperature Tj Max
Junction To Case Thermal Resistance A
Operating Temperature Min
Operating Temperature Range
Power Dissipation Max
Pulsed Current Icm
Rise Time
Termination Type
Transistor Polarity
Transistor Type
Voltage Vces
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We are delighted to provide the GT50J325 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT50J325 and other electronic components in the IGBT Transistors category and beyond.

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GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Unit: mm Fast Switching Applications th The 4 generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: t = 0.05 s (typ.) f Low switching loss : E = 1.30 mJ (typ.) on : E = 1.34 mJ (typ.) off Low saturation Voltage: V = 2.0 V (typ.) CE (sat) FRD included between emitter and collector Maximum Ratings (Ta 25C) Characteristics Symbol Rating Unit Collector-emitter voltage V 600 V CES Gate-emitter voltage V 20 V GES JEDEC DC I 50 C Collector current A JEITA 1 ms I 100 CP TOSHIBA 2-21F2C DC I 50 F Emitter-collector forward A current Weight: 9.75 g 1 ms I 100 FM Collector power dissipation P 240 W C (Tc 25C) Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R 0.521 C/W th (j-c) Thermal resistance (diode) R 2.30 C/W th (j-c) Equivalent Circuit Collector Gate Emitter 1 GT50J325 Electrical Characteristics (Ta 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V 20 V, V 0 500 nA GES GE CE Collector cut-off current I V 600 V, V 0 1.0 mA CES CE GE Gate-emitter cut-off voltage V I 5 mA, V 5 V 3.5 6.5 V GE (OFF) C CE Collector-emitter saturation voltage V I 50 A, V 15 V 2.0 2.45 V CE (sat) C GE Input capacitance C V 10 V, V 0, f 1 MHz 7900 pF ies CE GE Turn-on delay time t 0.09 d (on) Rise time t 0.07 r Turn-on time t 0.24 on Inductive load Switching time s Turn-off delay time t V 300 V, I 50 A 0.30 d (off) CC C V 15 V, R 13 GG G Fall time t 0.05 f (Note 1) Turn-off time t 0.43 off (Note 2) Turn-on switching E 1.30 on loss Switching loss mJ Turn-off switching E 1.34 off loss Peak forward voltage V I 50 A, V 0 4.2 V F F GE Reverse recovery time t I 50 A, di/dt 100 A/ s 65 ns rr F Note 1: Switching time measurement circuit and input/output waveforms V GE 90% 10% 0 V GE I L C I V C CC 90% 90% R G V CE V 10% 10% 10% 10% CE 0 t t d (off) d (on) t f t r t t off on Note 2: Switching loss measurement waveforms V GE 90% 10% 0 I C V 5% CE 0 E E off on 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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