X-On Electronics has gained recognition as a prominent supplier of FGY60T120SQDN IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGY60T120SQDN IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGY60T120SQDN ON Semiconductor

Name: FGY60T120SQDN
Brand: ON Semiconductor
SKU: FGY60T120SQDN_ON Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

FGY60T120SQDN electronic component of ON Semiconductor

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See Product Specifications

Part No.	FGY60T120SQDN
Manufacturer:	ON Semiconductor
Category:	IGBT Transistors
Description:	Trans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube
Datasheet:	FGY60T120SQDN Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 14.6107 ea
Line Total: USD 14.61

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

FGY60T120SQDN More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 450 Multiples : 1	450 : USD 7.492 510 : USD 7.4668 900 : USD 7.181 1020 : USD 7.069

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 1 Multiples : 1	1 : USD 23.1631 10 : USD 20.1834 100 : USD 16.71 500 : USD 14.5509 1000 : USD 12.6733

0 Ship by Fri. 27 Dec to Thu. 02 Jan MOQ : 450 Multiples : 450	450 : USD 7.857

0 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 1 Multiples : 1	1 : USD 14.6107 10 : USD 12.741 30 : USD 10.53 90 : USD 9.5736

0 Ship by Wed. 25 Dec to Fri. 27 Dec MOQ : 1 Multiples : 1	1 : USD 10.3047 10 : USD 8.9513 25 : USD 8.7317 100 : USD 7.4141 450 : USD 6.8599 900 : USD 6.8076

We are delighted to provide the FGY60T120SQDN from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGY60T120SQDN and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

The FGY60T120SQDN is a power IGBT with an N-channel junction designed and manufactured by ON Semiconductor. The three-pin TO-247 tube has a voltage rating of 1200V, and carries a maximum current rating of 120A. The chip contains a fast switching time die with low gate drive power and low on-state resistance, making it ideal for use in high-speed switching circuits. Its TO-247 packaging allows for easy installation and excellent thermal conductivity for better power dissipation. Furthermore, the high surge gate current increases the reliability of the device in a range of circuits under various applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Aptina / ON Semiconductor may also be referenced as

FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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Manufacturer ON Semiconductor ON Semiconductor
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1200 V 1200 V
Collector-Emitter Saturation Voltage 1.7 V 1.7 V
Maximum Gate Emitter Voltage 25 V 25 V
Continuous Collector Current at 25 C 120 A 120 A
Gate-Emitter Leakage Current 200 nA 200 nA
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 517 W 517 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Continuous Collector Current Ic Max 120 A 120 A
Brand On Semiconductor On Semiconductor
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 450 450
Subcategory Igbts Igbts