X-On Electronics has gained recognition as a prominent supplier of FGY60T120SQDN IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGY60T120SQDN IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGY60T120SQDN ON Semiconductor

FGY60T120SQDN electronic component of ON Semiconductor
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Part No.FGY60T120SQDN
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: Trans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube
Datasheet: FGY60T120SQDN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.6106 ea
Line Total: USD 14.61 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 450
Multiples : 1
450 : USD 7.4995
510 : USD 7.4743
900 : USD 7.1883
1020 : USD 7.0762

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 23.9225
10 : USD 20.8451
100 : USD 17.2578
500 : USD 15.028
1000 : USD 13.0888

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 450
Multiples : 450
450 : USD 8.1147

0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 14.6106
10 : USD 12.7411
30 : USD 10.53
90 : USD 9.5737

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 10.6425
10 : USD 9.2448
25 : USD 9.018
100 : USD 7.6572
450 : USD 7.0848
900 : USD 7.0308

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
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We are delighted to provide the FGY60T120SQDN from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGY60T120SQDN and other electronic components in the IGBT Transistors category and beyond.

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The FGY60T120SQDN is a power IGBT with an N-channel junction designed and manufactured by ON Semiconductor. The three-pin TO-247 tube has a voltage rating of 1200V, and carries a maximum current rating of 120A. The chip contains a fast switching time die with low gate drive power and low on-state resistance, making it ideal for use in high-speed switching circuits. Its TO-247 packaging allows for easy installation and excellent thermal conductivity for better power dissipation. Furthermore, the high surge gate current increases the reliability of the device in a range of circuits under various applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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