DATA SHEET www.onsemi.com IGBT, Field Stop 600 V, 75 A FGY75N60SMD TO2473LD CASE 340CD General Description Using novel field stop IGBT technology, onsemis new series of nd field stop 2 generation IGBTs offer the optimum performance for C solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features High Current Capability G Low Saturation Voltage: V = 1.9 V I = 75 A CE(sat) C High Input Impedance Fast Switching: E = 10 J/A OFF E RoHS Compliant MARKING DIAGRAM Applications Solar Inverter, UPS, Welder, SMPS, PFC ABSOLUTE MAXIMUM RATINGS Y&Z&3&K FGY75N60 Symbol Parameter Value Unit SMD V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current, T = 25C 150 A C C Y = Logo Collector Current, T = 100C 75 A C &Z = Assembly Plant Code &3 = Date Code (Year & Week) I Pulsed Collector Current, T = 25C 225 A C CM(1) &K = Lot Run Traceability Code I Diode Forward Current, T = 25C 75 A F C FGY75N60SMD = Specific Device Code Diode Forward Current, T = 100C 50 A C I Pulsed Diode Maximum Forward 225 A FM(1) ORDERING INFORMATION Current P Maximum Power Dissipation, 750 W Device Package Shipping D T = 25C C FGY75N60SMD TO2473LD 450 / Tube Maximum Power Dissipation, 375 W (PbFree) T = 100C C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C stg T Maximum Lead Temp. for Soldering 300 C L Purposes, 1/8 from case for 5 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ Max Unit R (IGBT) Thermal Resistance, Junction to Case 0.2 C/W JC R (Diode) Thermal Resistance, Junction to Case 0.48 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: October, 2021 Rev. 3 FGY75N60SMD/DFGY75N60SMD ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted.) C Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Collector to Emitter Breakdown Voltage V = 0 V, I = 250 A 600 V CES GE C BV / T Temperature Coefficient of Breakdown V = 0 V, I = 250 A 0.67 V/C CES J GE C Voltage I Collector CutOff Current V = V , V = 0 V 250 A CES CE CES GE I GE Leakage Current V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS V GE Threshold Voltage I = 250 A, V = V 3.5 5.0 6.5 V GE(th) C CE GE V Collector to Emitter Saturation Voltage I = 75 A, V = 15 V 1.90 2.50 V CE(sat) C GE I = 75 A, V = 15 V, T = 175C 2.14 V C GE C DYNAMIC CHARACTERISTICS C Input Capacitance V = 30 V, V = 0 V, f = 1 MHz 3800 pF ies CE GE C Output Capacitance 390 pF oes C Reverse Transfer Capacitance 105 pF res SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 400 V, I = 75 A, 24 32 ns d(on) CC C R = 3 , V = 15 V, G GE t Rise Time 56 73 ns r Inductive Load, T = 25C C t TurnOff Delay Time 136 177 ns d(off) t Fall Time 22 29 ns f E TurnOn Switching Loss 2.3 2.99 mJ on E TurnOff Switching Loss 0.77 1.00 mJ off E Total Switching Loss 3.07 3.99 mJ ts t TurnOn Delay Time V = 400 V, I = 75 A, 23 ns d(on) CC C R = 3 , V = 15 V, G GE t Rise Time 53 ns r Inductive Load, T = 175C C t TurnOff Delay Time 146 ns d(off) t Fall Time 15 ns f E TurnOn Switching Loss 3.60 mJ on E TurnOff Switching Loss 1.11 mJ off E Total Switching Loss 4.71 mJ ts V = 400 V, I = 75 A, V = 15 V Q Total Gate Charge 248 370 nC g CE C GE Q Gate to Emitter Charge 28 42 nC ge Qgc Gate to Collector Charge 129 195 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25C unless otherwise noted.) C Symbol Parameter Test Conditions Min Typ Max Unit V Diode Forward Voltage I = 50 A T = 25C 1.75 2.1 V FM F C T = 175C 1.35 C E Reverse Recovery Energy I = 50 A, T = 175C 0.14 mJ rec F C di /dt = 200 A/ s F t Diode Reverse Recovery Time T = 25C 41 55 ns rr C V = 400 V R T = 175C 126 C Q Diode Reverse Recovery Charge T = 25C 81 115 nC rr C T = 175C 736 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2