X-On Electronics has gained recognition as a prominent supplier of FII30-06D IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FII30-06D IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FII30-06D IXYS

FII30-06D electronic component of IXYS
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Part No.FII30-06D
Manufacturer: IXYS
Category: IGBT Transistors
Description: IXYS IGBT Transistors 30 Amps 600V
Datasheet: FII30-06D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 8.3102
10 : USD 7.0825
100 : USD 6.2867
250 : USD 6.1674
500 : USD 5.9386
1000 : USD 5.66
2500 : USD 5.66
5000 : USD 5.3517
10000 : USD 5.2224
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 7.5487
4 : USD 6.912
N/A

Obsolete
0
MOQ : 25
Multiples : 25
25 : USD 7.8975
50 : USD 7.0276
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Tradename
Height
Length
Operating Temperature Range
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the FII30-06D from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FII30-06D and other electronic components in the IGBT Transistors category and beyond.

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FII 30-06D I = 30 A C25 IGBT phaseleg V = 600 V CES in ISOPLUS i4-PAC V = 1.9 V CE(sat) typ. 3 5 4 1 E72873 2 Features IGBT NPT IGBT technology Symbol Conditions Maximum Ratings - low saturation voltage V T = 25C to 150C 600 V CES VJ - positive temperature coefficient for easy paralleling V 20 V GES - fast switching I T = 25C 30 A C25 C HiPerFRED diode I T = 90C 18 A C90 C - optimized fast and soft reverse recovery I V = 15 V R = 47 T = 125C 40 A CM GE G VJ - low operating forward voltage V RBSOA Clamped inductive load L = 100 H V CEK CES - low leakage current t V = V V = 15 V R = 47 10 s SC CE CES GE G ISOPLUS i4-PAC package (SCSOA) T = 125C non-repetitive VJ - isolated back surface P T = 25C 100 W tot C - low coupling capacity between pins and heatsink Symbol Conditions Characteristic Values - enlarged creepage towards heatsink - application friendly pinout (T = 25C, unless otherwise specified) VJ - low inductive current path min. typ. max. - high reliability V I = 20 A V = 15 V T = 25C 1.9 2.4 V CE(sat) C GE VJ - industry standard outline T = 125C 2.2 V VJ - UL registered E 72873 V I = 0.5 mA V = V 4.5 6.5 V GE(th) C GE CE Applications I V = V V = 0 V T = 25C 0.6 mA CES CE CES GE VJ single phaseleg T = 125C 0.6 mA VJ - buck-boost chopper I V = 0 V V = 20 V 200 nA GES CE GE H bridge t 50 ns - power supplies d(on) t 55 ns - induction heating r Inductive load T = 125C VJ t 200 ns - four quadrant DC drives d(off) V = 300 V I = 20 A CE C t 30 ns - controlled rectifier f V = 15 V R = 47 GE G E 0.75 mJ three phase bridge on E 0.6 mJ - AC drives off - controlled rectifier C V = 25 V V = 0 V f = 1 MHz 1.1 nF ies CE GE Q V = 300 V V = 15 V I = 20 A 65 nC Gon CE GE C R 1.25 K/W thJC R with heatsink compound 2.5 K/W thJH IXYS reserves the right to change limits, test conditions and dimensions. 20110119a 2011 IXYS All rights reserved 1 - 5 PHASE-OUTFII 30-06D Diode Symbol Conditions Maximum Ratings V T = 25C to 150C 600 V RRM VJ I T = 25C 30 A F25 C I T = 90C 15 A F90 C Symbol Conditions Characteristic Values min. typ. max. V I = 20 A T = 25C 2.3 2.7 V F F VJ T = 125C 1.6 V VJ I I = 15 A di /dt = -400 A/s 7 A RM F F t V = 300 V V = 0 V T = 125C 50 ns rr R GE VJ R (per diode) 2.3 K/W thJC R with heatsink compound 4.6 K/W thJH Component Symbol Conditions Maximum Ratings T operating -55...+150 C VJ T -55...+125 C stg V I < 1 mA 50/60 Hz t = 1 s 2500 V~ ISOL ISOL F Mounting force with clip 20...120 Nm C Symbol Conditions Characteristic Values min. typ. max. C coupling capacity between shorted P 40 pF pins and mounting tab in the case d , d pin - pin 1.7 mm S A d , d pin - backside metal 5.5 mm S A Weight 6 g MI L L I MET ER I NCHES DI M. MI N MAX MI N MAX A 4.83 5.21 0.190 0.205 A1 2.59 3.00 0.102 0.118 A A2 1.17 2.16 0.046 0.085 A2 E E1 b 1.14 1.40 0.045 0.055 b2 1.47 1.73 0.058 0.068 b4 2.54 2.79 0.100 0.110 C 0.51 0.74 0.020 0.029 D 20.80 21.34 0.819 0.840 D1 14.99 15.75 0.590 0.620 D2 1.65 2.03 0.065 0.080 E 19.56 20.29 0.770 0.799 E1 16.76 17.53 0.660 0.690 e 3.81 BSC 0.15 BSC L 19.81 21.34 0.780 0.840 L1 2.11 2.59 0.083 0.102 Q 5.33 6.20 0.210 0.244 4x e R 4.57 0.100 0.180 C b2 2.54 1 2 3 4 5 W 0.10 0.004 A1 Die konvexe Form des Substrates ist typ. < 0.05 mm ber b der Kunststoffoberflche der Bauteilunterseite b4 The convex bow of substrate is typ. < 0.05 mm over plastic W surface level ofdevice bottom side IXYS reserves the right to change limits, test conditions and dimensions. 20110119a 2011 IXYS All rights reserved 2 - 5 PHASE-OUT L D R L1 Q D1 D2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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