IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95LQDT th Trench Field Stop 4 generation Low Vcesat IGBT copackaged with full current rated diode. www.onsemi.com Features Maximum Junction Temperature : T = 175 J 75 A, 950 V Positive Temperature Coefficient for Easy Parallel Operating V = 1.31 V (Typ.) CESat High Current Capability C Low Saturation Voltage: V = 1.31 V (Typ.) I = 75 A CE(Sat) C Fast Switching Tighten Parameter Distribution These Devices are PbFree and are RoHS Compliant G Applications E Solar Inverter MAXIMUM RATINGS Rating Symbol Value Unit 950 V Collector to Emitter Voltage V CES 20 V Gate to Emitter Voltage V GES 30 G Transient Gate to Emitter Voltage TO2473LD C CASE 340CD E 150 IC A Collector Current T = 25C C 75 T = 100C C MARKING DIAGRAM I 225 A LM Pulsed Collector Current (Note 1) I 225 A CM Pulsed Collector Current (Note 2) Y&Z&3&K FGY75T95 150 IF A Diode Forward Current T = 25C C LQDT 75 T = 100C C I 225 A FM Pulsed Diode Forward Current (Note 2) 453 W PD Maximum Power Dissipation T = 25C C 226 T = 100C C 55 to +175 C TJ, TSTG Operating Junction / Storage Temperature Range C Y = ON Semiconductor Logo T 300 L Maximum Lead Temp. for Soldering &Z = Assembly Plant Code Purposes, 1/8 from case for 5 seconds &3 = Numeric Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the &K = 2Digit Lot Traceability Code device. If any of these limits are exceeded, device functionality should not be FGY75T95LQDT = Specific Device Code assumed, damage may occur and reliability may be affected. 1. VCC = 700 V, VGE = 15 V, IC = 225 A, RG = 26 , Inductive Load, 100% Tested ORDERING INFORMATION 2. Pulse width limited by max Junction temperature. Defined by design. See detailed ordering and shipping information on page 2 of Not subject to production test this data sheet. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: May, 2020 Rev. P1 FGY75T95LQDT/DFGY75T95LQDT ORDERING INFORMATION Part Number Top Marking Package Shipping FGY75T95LQDT FGY75T95LQDT TO2473LD 30 Units / Rail (Pb-Free) THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.33 C/W JC Thermal resistance junctiontocase, for Diode R 0.23 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, V = 0 V, I = 1 mA BVCES 950 V GE C gateemitter shortcircuited BVCES Temperature Coefficient of Breakdown V = 0 V, I = 1 mA V/C 0.96 GE C T J Voltage Collectoremitter cutoff current, gate V = 0 V, V = 950 V ICES 250 A GE CE emitter shortcircuited Gate leakage current, collectoremitter V = 20 V , V = 0 V IGES 400 nA GE CE shortcircuited ON CHARACTERISTICS Gateemitter threshold voltage V = V , I = 75 mA VGE(th) 3.4 4.57 6.4 V GE CE C Collectoremitter saturation voltage V = 15 V, I = 75 A VCE(sat) 1.31 1.69 V GE C V = 15 V, I = 75 A, T = 175C 1.52 GE C J DYNAMIC CHARACTERISTICS Input capacitance V = 30 V, V = 0 V, f = 1 MHz Cies 15400 pF CE GE Output capacitance Coes 266 Reverse transfer capacitance Cres 85.3 Gate charge total V = 600 V, I = 75 V, V = 15 V Q 663.3 nC CE C GE g Gate to emitter charge Qge 76.1 Gate to collector charge Qgc 218.6 SWITCHING CHARACTERISTICS, INDUCTIVE LOAD 52.0 Turnon delay time T = 25C td(on) ns J V = 600 V, I = 37.5 A CC C 24.0 Rise time t r Rg = 4.7 V = 15 V 496.0 GE Turnoff delay time td(off) Inductive Load 108.0 Fall time t f 2.0 Turnon switching loss Eon mJ 1.8 Turnoff switching loss Eoff 3.7 Total switching loss Ets www.onsemi.com 2