NGTB50N65FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO2474L package that provides significant reduction in E Losses compared to standard TO2473L package. www.onsemi.com on The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with 50 A, 650 V a low forward voltage. V = 1.8 V Features CEsat Extremely Efficient Trench with Field Stop Technology E = 0.48 mJ on T = 175C Jmax C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO2474L for Minimal E Losses on Optimized for High Speed Switching G This is a PbFree Device E1 Typical Applications E Solar Inverters Uninterruptible Power Supplies (UPS) Neutral Point Clamp Topology ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit TO247 C E CASE 340AR Collectoremitter voltage V 650 V CES E1 G 4 LEAD Collector current I A C TC = 25C 160 TC = 100C 50 MARKING DIAGRAM Diode Forward Current I A F TC = 25C 160 TC = 100C 50 Diode Pulsed Current I 160 A FM T Limited by T Max PULSE J 50N65FL2 Pulsed collector current, T I 160 A pulse CM AYWWG limited by T Jmax Gateemitter voltage V 20 V GE Transient gateemitter voltage 30 (T = 5 s, D < 0.10) PULSE Power Dissipation P W D 50N65FL2 = Specific Device Code TC = 25C 417 A = Assembly Location TC = 100C 208 Y = Year Operating junction temperature range T 55 to +175 C WW = Work Week J G = PbFree Package Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NGTB50N65FL2WAG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2016 Rev. 1 NGTB50N65FL2WA/DNGTB50N65FL2WAG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.36 C/W JC Thermal resistance junctiontocase, for Diode R 0.62 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V 650 V V = 0 V, I = 500 A GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 50 A V 1.80 2.00 V GE C CEsat V = 15 V, I = 50 A, T = 175C 2.17 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 650 V I 0.3 mA GE CE CES emitter shortcircuited V = 0 V, V = 650 V, T 175C 5.5 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 5160 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 244 CE GE oes Reverse transfer capacitance C 141 res Gate charge total Q 215 nC g Gate to emitter charge Q 48 V = 480 V, I = 50 A, V = 15 V CE C GE ge Gate to collector charge Q 116 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 23 ns d(on) Rise time t 35 r Turnoff delay time t 123 T = 25C J d(off) V = 400 V, I = 50 A CC C Fall time t 54 f R = 10 g Turnon switching loss V = 15 V E 0.42 mJ GE on Turnoff switching loss E 0.55 off Total switching loss E 0.97 ts Turnon delay time t 22 ns d(on) Rise time t 38 r Turnoff delay time t 130 T = 175C J d(off) V = 400 V, I = 50 A CC C Fall time t 93 f R = 10 g Turnon switching loss E 0.58 V = 15 V mJ GE on Turnoff switching loss E 0.92 off Total switching loss E 1.50 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 50 A V 2.10 2.60 V GE F F V = 0 V, I = 50 A, T = 175C 2.20 GE F J Reverse recovery time t 94 ns rr T = 25C J Reverse recovery charge Q 0.36 C I = 50 A, V = 400 V F R rr di /dt = 200 A/ s F Reverse recovery current I 6.5 A rrm Reverse recovery time t 170 ns rr T = 175C J Reverse recovery charge Q 1.40 I = 50 A, V = 400 V C rr F R di /dt = 200 A/ s F Reverse recovery current I 13 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2