NGTB50N65S1WG Product Preview IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state www.onsemi.com voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. 50 A, 650 V Features V = 2.1 V CEsat T = 175C Jmax E = 0.53 mJ OFF Soft Fast Reverse Recovery Diode Optimized for High Speed Switching C These are PbFree Devices Typical Applications Welding G ABSOLUTE MAXIMUM RATINGS E Rating Symbol Value Unit Collectoremitter voltage V 650 V CES Collector current I A C TC = 25C 140 TC = 100C 50 Diode Forward Current I A F TO247 TC = 25C 140 G CASE 340AL TC = 100C 50 C E Diode Pulsed Current I 140 A FM T Limited by T Max PULSE J MARKING DIAGRAM Pulsed collector current, T I 140 A pulse CM limited by T Jmax V V Gateemitter voltage 20 GE V Transient gateemitter voltage 30 (T = 5 s, D < 0.10) PULSE 50N65S1 Power Dissipation P W D AYWWG TC = 25C 300 TC = 100C 150 Operating junction temperature range T 55 to +175 C J Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. G = PbFree Package This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. ORDERING INFORMATION Device Package Shipping NGTB50N65S1WG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. P0 NGTB50N65S1W/DNGTB50N65S1WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.50 C/W JC Thermal resistance junctiontocase, for Diode R 1.00 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 650 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 50 A V 1.50 2.1 2.45 V GE C CEsat V = 15 V, I = 50 A, T = 175C 2.8 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 650 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 650 V, T 175C 3.5 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3080 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 149 CE GE oes Reverse transfer capacitance C 88 res Gate charge total Q 128 nC g Gate to emitter charge Q 30 V = 480 V, I = 50 A, V = 15 V CE C GE ge Gate to collector charge Q 69 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 75 ns d(on) Rise time t 46 r T = 25C Turnoff delay time t 128 J d(off) V = 400 V, I = 50 A CC C Fall time t 68 f R = 10 g Turnon switching loss E 1.25 mJ V = 15 V on GE Turnoff switching loss E 0.53 off Total switching loss E 1.78 ts Turnon delay time t 70 ns d(on) Rise time t 48 r T = 175C Turnoff delay time t 135 J d(off) V = 400 V, I = 50 A CC C Fall time t 93 f R = 10 g Turnon switching loss E 1.75 mJ V = 15 V on GE Turnoff switching loss E 0.92 off Total switching loss E 2.67 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 50 A V 1.50 2.65 3.25 V GE F F V = 0 V, I = 50 A, T = 175C 2.8 GE F J Reverse recovery time t 70 ns rr T = 25C J Reverse recovery charge I = 50 A, V = 200 V Q 450 nC rr F R di /dt = 200 A/ s F Reverse recovery current I 11 A rrm Reverse recovery time t 120 ns rr T = 175C J Reverse recovery charge I = 50 A, V = 200 V Q 1.27 C F R rr di /dt = 200 A/ s F Reverse recovery current I 17 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2