X-On Electronics has gained recognition as a prominent supplier of NGTG12N60TF1G IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. NGTG12N60TF1G IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

NGTG12N60TF1G ON Semiconductor

NGTG12N60TF1G electronic component of ON Semiconductor
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Part No.NGTG12N60TF1G
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors 600V 12A IGBT TO-3PF
Datasheet: NGTG12N60TF1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.943 ea
Line Total: USD 0.94 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 5.7907
10 : USD 2.3395
100 : USD 1.6576
500 : USD 1.4561
1000 : USD 1.2238
2500 : USD 1.1404
5000 : USD 1.1007
10000 : USD 1.0957

0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 450
Multiples : 1
450 : USD 1.486

0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 0.943

0
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 4.6376
10 : USD 1.6846
30 : USD 1.5944
120 : USD 1.3738
450 : USD 1.1531
900 : USD 1.0228
2700 : USD 0.9907

0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 8
Multiples : 1
8 : USD 2.7023
10 : USD 2.3395

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Series
Brand
Factory Pack Quantity :
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Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NGTG12N60TF1G from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NGTG12N60TF1G and other electronic components in the IGBT Transistors category and beyond.

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Ordering number : ENA2219 NGTG12N60TF1G N-Channel IGBT NGTG12N60TF1G Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Turn-ON Delay Time t (on) 55 ns d V =300V,I =15A Rise Time CC C t 30 ns r R =30,L=200H G Turn-ON Time ton 330 ns V =0V/15V GE Turn-OFF Delay Time t(off) 200 ns d Vclamp=400V Fall Time t 110 ns f See Fig.1, See Fig.2 Turn-OFF Time toff 350 ns Total Gate Charge Qg 84 nC Gate to Emitter Charge Qge V =300V, V =15V, I =15A 16 nC CE GE C Gate to Collector Miller Charge Qgc 37 nC Thermal Characteristics at Ta = 25C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Thermal Resistance (junction- Case) Rth(j-c) Tc=25C (our ideal heat dissipation condition)*2 2.33 C /W Thermal Resistance (junction- atmosphere) Rth(j-a) 47.5 C /W No.A2219-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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