NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. NGTG30N60FLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.486 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 30 A V 1.4 1.65 1.9 V GE C CEsat V = 15 V, I = 30 A, T = 150C 2.0 GE C J Gateemitter threshold voltage V 4.5 5.5 6.5 V V = V , I = 200 A GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.2 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T = 150C 2 GE CE J Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 4200 pF ies Output capacitance C 130 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 110 res Gate charge total Q 170 nC g Gate to emitter charge Q 34 V = 480 V, I = 30 A, V = 15 V ge CE C GE Q 83 Gate to collector charge gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 83 ns d(on) Rise time t 31 r Turnoff delay time t 170 d(off) T = 25C J V = 400 V, I = 30 A CC C Fall time t 80 f R = 10 g V = 0 V/ 15 V Turnon switching loss GE E 0.7 mJ on Turnoff switching loss E 0.28 off Total switching loss E 0.98 ts Turnon delay time t 81 ns d(on) Rise time t 32 r Turnoff delay time t 180 d(off) T = 150C J V = 400 V, I = 30 A CC C Fall time t 110 f R = 10 g V = 0 V/ 15 V Turnon switching loss E 0.82 mJ GE on Turnoff switching loss E 0.63 off Total switching loss E 1.45 ts