X-On Electronics has gained recognition as a prominent supplier of NHPD660T4G Rectifiers across the USA, India, Europe, Australia, and various other global locations. NHPD660T4G Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

NHPD660T4G ON Semiconductor

NHPD660T4G electronic component of ON Semiconductor
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Part No.NHPD660T4G
Manufacturer: ON Semiconductor
Category: Rectifiers
Description: Rectifiers PUF 6A 600V IN DPAK
Datasheet: NHPD660T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7841 ea
Line Total: USD 0.78 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
287
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5755
10 : USD 1.311
100 : USD 1.0419
500 : USD 0.9085
1000 : USD 0.797
2500 : USD 0.7268
10000 : USD 0.698
25000 : USD 0.6796

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Product
Brand
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NHPD660T4G from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NHPD660T4G and other electronic components in the Rectifiers category and beyond.

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NHPD660, NRVHPD660 Switch Mode Power Rectifier DPAK Surface Mount Package www.onsemi.com These stateoftheart devices are designed for use in switching power supplies, inverters and as free wheeling diodes. PLANAR ULTRAFAST RECTIFIER Features 6.0 AMPERES, 600 VOLTS Ultrafast 30 Nanosecond Recovery Time 175C Operating Junction Temperature High Voltage Capability of 600 V Low Forward Drop Low Leakage Specified 125C Case Temperature DPAK NRV Prefix for Automotive and Other Applications Requiring CASE 369C Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 4 3 Compliant Mechanical Characteristics MARKING DIAGRAM Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) AYWW NHP Finish: All External Surfaces Corrosion Resistant and Terminal D660T Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: A = Assembly Location 260C Max. for 10 Seconds Y = Year ESD Ratings: WW = Work Week Machine Model = C (> 400 V) G = PbFree Package Human Body Model = 3B (> 8 kV) ORDERING INFORMATION Applications Boost Rectifier for SMPS PFC Operating in Continuous Conduction Device Package Shipping Mode (CCM) NHPD660T4G DPAK 2,500/Tape & Reel LED Lighting Power Conversion (PbFree) 16 mm Automotive Diesel Piezo Injection NRVHPD660T4G DPAK 2,500/Tape & Reel (PbFree) 16 mm Thin and Ultra Thin Flat Panel Display Output Rectification in High Frequency High Output Voltage For information on tape and reel specifications, including part orientation and tape sizes, please Applications refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2014 Rev. 0 NHPD660/DNHPD660, NRVHPD660 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 145C) 6.0 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 135C) 12.0 R C NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) 60 Operating Junction and Storage Temperature Range T , T 65 to +175 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance JunctiontoCase R 4.2 C/W JC Thermal Resistance JunctiontoAmbient (Note 1) R 95.7 C/W JA 1. Rating applies when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS Characteristic Test Conditions Symbol Typ Max Unit Instantaneous Forward Voltage (i = 6 A, T = 125C) v 1.45 1.8 V F C F (Note 2) (i = 6 A, T = 25C) 2.4 3.0 F C Instantaneous Reverse Current (Rated DC Voltage, T = 125C) i 35 300 A C R (Note 2) (Rated DC Voltage, T = 25C) 0.035 30 C Reverse Recovery Time (I = 0.5 A, I = 0.25 A, I = 1 A) t 30 ns F rr R rr (I = 1 A, dI /dt = 50 A/ s, V = 30 V) 50 F F R Reverse Recovery Time (I = 6 A, d /d = 200 A/ s, T = 25C) t 30 50 ns rr F IF t C Peak Reverse Recovery Current I 2.3 3 A RM Total Reverse Recovery Charge Q 37 50 nC rr Softness Factor S 2 Reverse Recovery Time (I = 6 A, d /d = 200 A/ s, T = 125C) t 45 ns F IF t C rr Peak Reverse Recovery Current I 5.5 A RM Total Reverse Recovery Charge Q 150 nC rr Softness Factor S 0.35 Forward Recovery Time (I = 6 A, d /d = 120 A/ s, T = 25C) t 200 ns F IF t C fr Forward Voltage Time V 6 V FP 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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