NHPD660, NRVHPD660 Switch Mode Power Rectifier DPAK Surface Mount Package www.onsemi.com These stateoftheart devices are designed for use in switching power supplies, inverters and as free wheeling diodes. PLANAR ULTRAFAST RECTIFIER Features 6.0 AMPERES, 600 VOLTS Ultrafast 30 Nanosecond Recovery Time 175C Operating Junction Temperature High Voltage Capability of 600 V Low Forward Drop Low Leakage Specified 125C Case Temperature DPAK NRV Prefix for Automotive and Other Applications Requiring CASE 369C Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 4 3 Compliant Mechanical Characteristics MARKING DIAGRAM Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) AYWW NHP Finish: All External Surfaces Corrosion Resistant and Terminal D660T Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: A = Assembly Location 260C Max. for 10 Seconds Y = Year ESD Ratings: WW = Work Week Machine Model = C (> 400 V) G = PbFree Package Human Body Model = 3B (> 8 kV) ORDERING INFORMATION Applications Boost Rectifier for SMPS PFC Operating in Continuous Conduction Device Package Shipping Mode (CCM) NHPD660T4G DPAK 2,500/Tape & Reel LED Lighting Power Conversion (PbFree) 16 mm Automotive Diesel Piezo Injection NRVHPD660T4G DPAK 2,500/Tape & Reel (PbFree) 16 mm Thin and Ultra Thin Flat Panel Display Output Rectification in High Frequency High Output Voltage For information on tape and reel specifications, including part orientation and tape sizes, please Applications refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2014 Rev. 0 NHPD660/DNHPD660, NRVHPD660 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 600 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 145C) 6.0 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 135C) 12.0 R C NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, 60 Hz) 60 Operating Junction and Storage Temperature Range T , T 65 to +175 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance JunctiontoCase R 4.2 C/W JC Thermal Resistance JunctiontoAmbient (Note 1) R 95.7 C/W JA 1. Rating applies when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS Characteristic Test Conditions Symbol Typ Max Unit Instantaneous Forward Voltage (i = 6 A, T = 125C) v 1.45 1.8 V F C F (Note 2) (i = 6 A, T = 25C) 2.4 3.0 F C Instantaneous Reverse Current (Rated DC Voltage, T = 125C) i 35 300 A C R (Note 2) (Rated DC Voltage, T = 25C) 0.035 30 C Reverse Recovery Time (I = 0.5 A, I = 0.25 A, I = 1 A) t 30 ns F rr R rr (I = 1 A, dI /dt = 50 A/ s, V = 30 V) 50 F F R Reverse Recovery Time (I = 6 A, d /d = 200 A/ s, T = 25C) t 30 50 ns rr F IF t C Peak Reverse Recovery Current I 2.3 3 A RM Total Reverse Recovery Charge Q 37 50 nC rr Softness Factor S 2 Reverse Recovery Time (I = 6 A, d /d = 200 A/ s, T = 125C) t 45 ns F IF t C rr Peak Reverse Recovery Current I 5.5 A RM Total Reverse Recovery Charge Q 150 nC rr Softness Factor S 0.35 Forward Recovery Time (I = 6 A, d /d = 120 A/ s, T = 25C) t 200 ns F IF t C fr Forward Voltage Time V 6 V FP 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2