NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. NGTG50N60FWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.56 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 50 A V 1.25 1.45 1.7 V GE C CEsat V = 15 V, I = 50 A, T = 150C 1.7 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 150C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES short circuited DYNAMIC CHARACTERISTIC Input capacitance C 7300 pF ies Output capacitance C 195 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 170 res Gate charge total Q 310 nC g Gate to emitter charge V = 480 V, I = 50 A, V = 15 V Q 60 ge CE C GE Gate to collector charge Q 150 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 117 ns d(on) Rise time t 43 r Turn off delay time t 285 d(off) T = 25C J V = 400 V, I = 50 A CC C Fall time t 105 f R = 10 g V = 0 V/ 15 V* Turnon switching loss E 1.1 mJ GE on Turn off switching loss E 1.2 off Total switching loss E 2.3 ts Turnon delay time t 112 ns d(on) Rise time t 45 r Turn off delay time t 300 d(off) T = 150C J V = 400 V, I = 50 A CC C Fall time t 214 f R = 10 g V = 0 V/ 15 V* Turnon switching loss GE E 1.4 mJ on Turn off switching loss E 2.0 off Total switching loss E 3.4 ts *Includes diode reverse recovery loss using NGTB50N60FWG.