NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. www.onsemi.com Features Extremely Efficient Trench with Field Stop Technology T = 175C 35 A, 650 V Jmax Optimized for High Speed Switching V = 1.70 V CEsat 5 s ShortCircuit Capability E = 0.28 mJ OFF These are PbFree Devices C Typical Applications Solar Inverters Uninterruptible Power Supplies (UPS) Welding G ABSOLUTE MAXIMUM RATINGS E Rating Symbol Value Unit Collectoremitter voltage V 650 V CES Collector current I A C TC = 25C 70 TC = 100C 35 Pulsed collector current, T I 120 A TO247 pulse CM G limited by T Jmax CASE 340L C STYLE 4 E Shortcircuit withstand time t 5 s SC V = 15 V, V = 400 V, GE CE T +150C J MARKING DIAGRAM Gateemitter voltage V 20 V GE V Transient gateemitter voltage 30 (T = 5 s, D < 0.10) PULSE Power Dissipation P W D TC = 25C 300 TC = 100C 150 G35N65FL2 AYWWG Operating junction temperature range T 55 to +175 C J Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping NGTG35N65FL2WG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: September, 2016 Rev. 1 NGTG35N65FL2W/DNGTG35N65FL2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.50 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 650 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 35 A V 1.50 1.70 2.00 V GE C CEsat V = 15 V, I = 35 A, T = 175C 2.20 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 650 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 650 V, T 175C 4.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3115 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 149 CE GE oes Reverse transfer capacitance C 88 res Gate charge total Q 125 nC g Gate to emitter charge V = 480 V, I = 35 A, V = 15 V Q 30 CE C GE ge Gate to collector charge Q 63 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 72 ns d(on) Rise time t 40 r Turnoff delay time T = 25C t 132 d(off) J V = 400 V, I = 35 A CC C Fall time t 75 f R = 10 g Turnon switching loss V = 0 V/ 15 V* E 0.84 mJ GE on Turnoff switching loss E 0.28 off Total switching loss E 1.12 ts Turnon delay time t 70 ns d(on) Rise time t 38 r Turnoff delay time T = 150C t 135 d(off) J V = 400 V, I = 35 A CC C Fall time t 96 f R = 10 g Turnon switching loss V = 0 V/ 15 V* E 1.05 mJ GE on Turnoff switching loss E 0.50 off Total switching loss E 1.55 ts Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes diode reverse recovery loss using NGTG35N65FL2WG. www.onsemi.com 2