X-On Electronics has gained recognition as a prominent supplier of NGD8201ANT4G IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. NGD8201ANT4G IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

NGD8201ANT4G ON Semiconductor

NGD8201ANT4G electronic component of ON Semiconductor
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Part No.NGD8201ANT4G
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors NGD8201ANT4G GEN4 IGBT
Datasheet: NGD8201ANT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.727
10 : USD 0.9135
100 : USD 0.7355
500 : USD 0.6707
1000 : USD 0.5832
2500 : USD 0.5821
N/A

Obsolete
0
MOQ : 24
Multiples : 24
24 : USD 0.997
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NGD8201ANT4G from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NGD8201ANT4G and other electronic components in the IGBT Transistors category and beyond.

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Ignition IGBT Surface Mount > 400V > NGD8201AN Pb NGD8201AN - 20 A, 400 V, N-Channel Ignition IGBT, DPAK Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features Ideal for CoilonPlug and DriveronCoil Applications DPAK Package Offers Smaller Footprint for Increased Board Space GateEmitter ESD Protection 20 Amps, 400 Volts Temperature Compensated GateCollector Voltage Clamp V (on) 1.3 V CE Limits Stress Applied to Load I = 10 A, V 4.5 V C GE Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching Maximum Ratings (T = 25C unless otherwise noted) J (UIS) Energy Per Area Rating Symbol Value Unit Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices CollectorEmitter Voltage V 440 V CES Low Saturation Voltage GateGate Voltage V 440 V CES High Pulsed Current Capability Emitter Ballasting for ShortCircuit Capability GateEmitter Voltage V 15 V GE These are PbFree Devices 20 A Collector CurrentContinuous DC I C T = 25C Pulsed C 50 A AC Functional Diagram Continous Gate Current I 1.0 mA G Transient Gate Current I 20 mA G (t 2 ms, f 100 Hz) ESD (ChargedDevice Model) ESD 2.0 kV ESD (Human Body Model) ESD 2.0 kV R = 1500 , C = 100 pF ESD (Machine Model) ESD 500 V R = 0 , C = 200 pF Additional Information 125 W Total Power Dissipation T = 25C C P D Derate above 25C 0.83 W/C Operating and Storage 55 to T , T C J stg Temperature Range +175 Samples Datasheet Resources Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18Ignition IGBT Surface Mount > 400V > NGD8201AN Unclamped CollectorToEmitter Avalanche Characteristics Symbol Value Unit Single Pulse CollectortoEmitter Avalanche Energy V = 50 V, V = 5.0 V, P I = 16.7 A, R = 1000 , L = 1.8 mH, Starting T = 25C 250 CC GE k L G J V = 50 V, V = 5.0 V, P I = 14.9 A, R = 1000 , L = 3.0 mH, Starting T = 150C E 200 mJ CC GE k L G J AS V = 50 V, V = 5.0 V, P I = 14.1 A, R = 1000 , L = 1.8 mH, Starting T = 175C 180 CC GE k L G J Reverse Avalanche Energy V = 100 V, V = 20 V, P I = 25.8 A, L = 6.0 mH, Starting T = 25C E 2000 mJ CC GE k L J AS (R) Thermal Characteristics Symbol Value Unit Thermal Resistance, Junction to Case 1.3 R JC C/W Thermal Resistance, Junction to Ambient DPAK (Note 1) 95 R JA Maximum Lead Temperature for Soldering Purposes, 1/8 T 275 C L from case for 5 seconds 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2018 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/15/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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