NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel www.onsemi.com Features Electrical Connection Reverse Conducting II IGBT N-Channel IGBT V (sat)=1.7V (typ) I =3A, V =15V CE C GE 2,4 IGBT t =75ns (typ) f Diode V =1.5V (typ) I =3A F F Diode t =65ns (typ) rr 5 s Short Circuit Capability 1 1:Gate 2:Collector Applications 3:Emitter 3 General Purpose Inverter 4:Collector Specifications 4 Absolute Maximum Ratings at Ta=25C, Unless otherwise specified DPAK CASE 369C Parameter Symbol Value Unit 2 1 3 V Collector to Emitter Voltage V 600 CES V Gate to Emitter Voltage V 20 GES 2 A Collector Current (DC) Tc=25C * 9 Marking Diagram 1 I C * 2 Limited by Tjmax Tc=100C * 4.5 A 1 Collector Current (Peak) Gate A I 12 CP Pulse width Llimited by Tjmax AYWW 2 4 I 4.5 A Diode Average Output Current O GTB Collector Collector 0360RG Power Dissipation P 49 W D 3 2 Tc=25 C (Our ideal heat dissipation condition) * Emitter Tj 175 C Junction Temperature GTB0360R = Device Code Tstg 55 to +175 C Storage Temperature = Assembly Location A Y = Year Note : *1 Collector Current is calculated from the following formula. WW = Work Week Tjmax - Tc G = Pb-Free Package I (Tc)= C R (j-c)V (sat) (I (Tc)) th CE C *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : September 2015 - Rev. 3 NGTB03N60R2DT4G/D NGTB03N60R2DT4G Electrical Characteristics at Ta=25C, Unless otherwise specified Value Parameter Symbol Conditions Unit min typ max Collector to Emitter Breakdown Voltage V( ) I =1mA, V=0V 600 V BR CES C GE Tc=25 C 10 A Collector to Emitter Cut off Current I V =600V, V =0V CES CE GE Tc=150C 1 mA Gate to Emitter Leakage Current I V =20V, V=0V 100 nA GES GE CE Gate to Emitter Threshold Voltage V(th) V =20V, I =80A 4.5 7.0 V GE CE C Tc=25 C 1.7 2.1 V Collector to Emitter Saturation Voltage V () V =15V, I =3A CE sat GE C Tc=100C 1.9 2.3 V Forward Diode Voltage V I=3A 1.5 2.1 V F F Input Capacitance Cies 415 pF Output Capacitance Coes V =20V, f=1MHz 17 pF CE Reverse Transfer Capacitance Cres 10 pF Turn-ON Delay Time t (on) 27 ns d Rise Time t 17 ns r V =300V, I =3A CC C Turn-ON Time ton 85 ns R =30, L=500 H G Turn-OFF Delay Time t(off) 59 ns d V =0V/15V GE Fall Time Vclamp=400V t 75 ns f Tc=25 C Turn-OFF Time toff 172 ns See Fig.1, See Fig.2 Turn-ON Energy Eon 50 J Turn-OFF Energy Eoff 27 J Total Gate Charge Qg 17 nC Gate to Emitter Charge Qge V =300V, V =15V, I =3A 4.4 nC CE GE C Gate to Collector Miller Charge Qgc 7.6 nC Diode Reverse Recovery Time t I =3A,di/dt=200A/ s, V =300V, See Fig.3 65 ns rr F CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Characteristics at Ta=25C, Unless otherwise specified Parameter Symbol Conditions Value Unit Tc=25 C Thermal Resistance IGBT (Junction to Case) Rth(j-c) (IGBT) 3.06 C/W 2 (Our ideal heat dissipation condition) * Thermal Resistance (Junction to Ambient) Rth(j-a) 100 C/W Note : *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. www.onsemi.com 2