Ordering number : ENA2196 NGTB20N60L2TF1G N-Channel IGBT NGTB20N60L2TF1G Continued from preceding page. Parameter Symbol Conditions Ratings Unit Junction Temperature Tj 175 C Storage Temperature Tstg - 55 to +175 C Electrical Characteristics at Ta = 25C, Unless otherwise specified Ratings Parameter Symbol Conditions Unit min typ max Collector to Emitter Breakdown Voltage V( ) I =500A, V=0V 600 V BR CES C GE 10 A V =600V, V=0V Tc=25C CE GE Collector to Emitter Cut off Current I CES Tc=150C 1mA Gate to Emitter Leakage Current I V =20V, V =0V 100 nA GES GE CE Gate to Emitter Threshold Voltage V(th) V =20V, I =250A 4.5 6.5V GE CE C 1.45 1.65 V V =15V, I=20A Tc=25C GE C Collector to Emitter Saturation Voltage V ( ) CE sat Tc=150C 1.8 V Diode Forward Voltage V I=20A 1.5 V F F Input Capacitance Cies 2000 pF Output Capacitance Coes V =20V,f=1MHz 60 pF CE Reverse Transfer Capacitance Cres 50 pF Turn-ON Delay Time t (on) 60 ns d Rise Time t 37 ns r V =300V,I =20A CC C Turn-ON Time ton 400 ns R =30,L=200H G Turn-OFF Delay Time V =0V/15V, Vclamp=400V t(off) 193 ns GE d See Fig.1, Fig.2 Fall Time t 67 ns f Turn-OFF Time toff 281 ns Total Gate Charge Qg 84 nC Gate to Emitter Charge Qge V =300V, V =15V, I =20A 16 nC CE GE C Gate to Collector Miller Charge Qgc 37 nC Diode Reverse Recovery Time t I =10A , di/dt=100A/s, V =50V See Fig.3 70 ns rr F CC Thermal Characteristics at Ta = 25C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Thermal Resistance IGBT (junction- case) Rth(j-c)(IGBT) Tc=25C (our ideal heat dissipation condition)*2 2.33 C /W Thermal Resistance Diode (junction- case) Rth(j-c)(Diode) Tc=25C (our ideal heat dissipation condition)*2 2.36 C /W Thermal Resistance (junction- atmosphere) Rth(j-a) 47.5 C /W No.A2196-2/8