NGTB40N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast NGTB40N120SWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.5 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 2.00 2.40 V GE C CEsat V = 15 V, I = 40 A, T = 175C 2.40 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.1 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited pF Input capacitance C 7385 ies Output capacitance C 230 V = 20 V, V = 0 V, f = 1 MHz CE GE oes Reverse transfer capacitance C 140 res nC Gate charge total Q 313 g Gate to emitter charge Q 61 V = 600 V, I = 40 A, V = 15 V CE C GE ge Gate to collector charge Q 151 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 116 ns d(on) Rise time t 42 r Turnoff delay time t 286 T = 25C d(off) J V = 600 V, I = 40 A CC C Fall time t 121 f R = 10 g V = 0 V/ 15V Turnon switching loss E 3.4 mJ GE on Turnoff switching loss E 1.1 off Total switching loss E 4.5 ts Turnon delay time t 111 ns d(on) Rise time t 43 r Turnoff delay time t 304 T = 175C d(off) J V = 600 V, I = 40 A CC C Fall time t 260 f R = 10 g V = 0 V/ 15 V mJ Turnon switching loss E 4.4 GE on Turnoff switching loss E 2.5 off Total switching loss E 6.9 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 2.00 2.60 V GE F F V = 0 V, I = 50 A, T = 175C 2.30 GE F J Reverse recovery time T = 25C t 240 ns J rr I = 40 A, V = 400 V F R Reverse recovery charge Q 2.5 c rr di /dt = 200 A/ s F Reverse recovery current I 18 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.