NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low www.onsemi.com forward voltage. 40 A, 650 V Features V = 1.8 V Extremely Efficient Trench with Fieldstop Technology CEsat Low Switching Loss Reduces System Power Dissipation E = 0.36 mJ off Optimized for Low Losses in IH Cooker Application C T = 175C Jmax Soft, Fast Free Wheeling Diode This is a PbFree Device G Typical Applications Inductive Heating Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 650 V CES Collector current I A C TC = 25C 80 G TO247 TC = 100C 40 C CASE 340AL E Pulsed collector current, T I 160 A pulse CM limited by T Jmax Diode forward current I A F TC = 25C 80 MARKING DIAGRAM TC = 100C 40 Diode pulsed current, T limited I 160 A pulse FM by T Jmax Gateemitter voltage V 20 V GE Transient Gate Emitter Voltage 30 (t = 5 s, D < 0.010) 40N65IHL2 p AYWWG Power Dissipation P W D TC = 25C 300 TC = 100C 150 Operating junction temperature T 55 to +175 C J range Storage temperature range T 55 to +175 C stg A = Assembly Location Lead temperature for soldering, 1/8 T 260 C SLD Y = Year from case for 5 seconds WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the G = PbFree Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NGTB40N65IHL2WG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2015 Rev. 1 NGTB40N65IHL2W/DNGTB40N65IHL2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.50 C/W JC Thermal resistance junctiontocase, for Diode R 1.46 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 650 V (BR)CES GE C gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 1.8 2.2 V GE C CEsat V = 15 V, I = 40 A, T = 175C 2.3 GE C J Gateemitter threshold voltage V = V , I = 150 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 650 V I 0.2 mA GE CE CES emitter shortcircuited V = 0 V, V = 650 V, T 175C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3200 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 130 oes CE GE Reverse transfer capacitance C 85 res Gate charge total Q 135 nC g Gate to emitter charge Q 27 V = 480 V, I = 40 A, V = 15 V ge CE C GE Gate to collector charge Q 67 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time t 140 ns d(off) T = 25C J V = 400 V, I = 40 A CC C Fall time t 65 f R = 10 g V = 0 V/ 15 V Turnoff switching loss E 0.36 mJ GE off Turnoff delay time t 150 ns d(off) T = 150C J V = 400 V, I = 40 A CC C Fall time t 85 f R = 10 g V = 0 V/ 15 V Turnoff switching loss GE E 0.60 mJ off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 1.2 1.4 V GE F F V = 0 V, I = 40 A, T = 175C 1.16 GE F J Reverse recovery time t 465 ns rr T = 25C J Reverse recovery charge I = 40 A, V = 200 V Q 8700 nc F R rr di /dt = 200 A/ s F Reverse recovery current I 36 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2