NGTB50N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO2474L package that provides significant www.onsemi.com reduction in E Losses compared to standard TO2473L package. on The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with 50 A, 1200 V a low forward voltage. V = 2.25 V CEsat Features E = 2.15 mJ on Extremely Efficient Trench with Field Stop Technology C T = 175C Jmax Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO2474L for Minimal E Losses on G Optimized for High Speed Switching These are PbFree Devices E1 E Typical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Neutral Point Clamp Topology TO247 ABSOLUTE MAXIMUM RATINGS C CASE 340AR E Rating Symbol Value Unit 4 LEAD E1 G Collectoremitter voltage V 1200 V CES Collector current TC = 25C I 200 A MARKING DIAGRAM C TC = 100C 50 Pulsed collector current, T I 200 A pulse CM limited by T Jmax Diode forward current TC = 25C I 200 A F TC = 100C 50 50N120FL2 AYWWG Diode pulsed current, T limited I 200 A pulse FM by T Jmax Gateemitter voltage V 20 V GE Transient gateemitter voltage 30 (T = 5 s, D < 0.10) pulse Power Dissipation TC = 25C P 536 W D 50N120FL2 = Specific Device Code TC = 100C 268 A = Assembly Location Y = Year Operating junction temperature range T 55 to +175 C J WW = Work Week Storage temperature range T 55 to +175 C stg G = PbFree Package Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. NGTB50N120FL2WAG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 0 NGTB50N120FL2WA/DNGTB50N120FL2WAG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.50 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 50 A V 2.25 2.60 V GE C CEsat V = 15 V, I = 50 A, T = 175C 2.80 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.4 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 4.0 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 200 nA GE CE GES shortcircuited Input capacitance C 7500 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 136 oes CE GE Reverse transfer capacitance C 230 res nC Gate charge total Q 313 g Gate to emitter charge V = 600 V, I = 50 A, V = 15 V Q 73 CE C GE ge Gate to collector charge Q 146 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 28 ns d(on) Rise time t 39 r Turnoff delay time t 150 T = 25C J d(off) V = 600 V, I = 50 A CC C Fall time t 95 f R = 10 g Turnon switching loss V = 15V E 2.15 mJ GE on Turnoff switching loss E 1.4 off Total switching loss E 3.45 ts Turnon delay time t 28 ns d(on) Rise time t 40 r Turnoff delay time t 165 T = 175C J d(off) V = 600 V, I = 50 A CC C Fall time t 195 f R = 10 g Turnon switching loss E 2.8 mJ V = 15V GE on Turnoff switching loss E 3.0 off Total switching loss E 5.8 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 50 A V 2.18 2.50 V GE F F V = 0 V, I = 50 A, T = 175C 2.55 GE F J Reverse recovery time t 281 ns rr T = 25C J Reverse recovery charge Q 2.6 c I = 50 A, V = 400 V F R rr di /dt = 200 A/ s F Reverse recovery current I 17 A rrm Reverse recovery time t 420 ns rr T = 175C J Reverse recovery charge Q 5.4 c I = 50 A, V = 400 V rr F R di /dt = 200 A/ s F Reverse recovery current I 23 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2